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Mev Ion Induced Damages and their Annealing Behavior in Silicon

Published online by Cambridge University Press:  21 February 2011

Nam-Hoon Cho ,
Ki-Wan Jang ,
Jeong-Yong Lee  and
Jae-Sang Ro
Nam-Hoon Cho
Affiliation:
Department of Metallurgy and Materials Science, Hong-Ik University, Seoul, 121–791, Korea
Ki-Wan Jang
Affiliation:
Department of Electronic Materials Engineering, KAIST, Taejon 305–701, Korea
Jeong-Yong Lee
Affiliation:
Department of Electronic Materials Engineering, KAIST, Taejon 305–701, Korea
Jae-Sang Ro
Affiliation:
Department of Metallurgy and Materials Science, Hong-Ik University, Seoul, 121–791, Korea
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Abstract

MeV ion induced damage and annealing behavior in Si are reported using 3 ion species such as B, P and Si. Si self implantations were done to reveal the intrinsic behavior of secondary defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant atoms. Experimental results of B and P implantations were compared to those of Si. TEM observations showed that interstitial type secondary defects are exclusively formed at around Rp. DCXRD rocking curve analyses indicated that an isolated layer of (+) strain is built up at around Rp after strain relaxation by annealing. Sources for secondary defects were thought to be Si self interstitials. Atomistic mechanisms of secondary defect formation and the effect of ion species on them are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 781
Copyright
Copyright © Materials Research Society 1996

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