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Mev Ion Beam Applications In III-V Semiconductors

Published online by Cambridge University Press:  25 February 2011

R.G. Elliman ,
M.C. Ridgway ,
S.T. JOHNSON  and
J.S. Williams
R.G. Elliman
Affiliation:
Also Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, Canberra, Australia
S.T. JOHNSON
Affiliation:
Also Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
J.S. Williams
Affiliation:
Also Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
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Abstract

This paper reviews some key areas where MeV ion beams can be applied to III-V semiconductor materials. In particular, ion damage is assessed for various III-V materials in terms of implantation parameters, especially substrate temperature and dose rate. Implant isolation, involving the introduction of damage to remove carriers and achieve highlyresistive layers, is assessed for MeV irradiation. It is concluded that MeV ions can provide deep, uniform damage with a single-energy implant. Finally, improved epitaxy of amorphous InP with MeV ions is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 291
Copyright
Copyright © Materials Research Society 1991

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References

1. Stephens, K.G., Nucl.Instr.Meth. 209/210, 589 (1983).CrossRefGoogle Scholar
2. Donnelly, J.P., in “III-V Semiconductor Materials and Devices”, ed. Malik, R.J., Elsevier Science Publishers, Amsterdam (1989) p. 331.Google Scholar
3. Pearton, S.J., Williams, J.S., Short, K.T., Johnson, S.T., Jacobson, D.C., Poate, J.M., Gibson, J.M. and Boerma, D.O., J.Appl.Phys. 65, 1089 (1989).Google Scholar
4. Pearton, S.J., Proceedings of IBMM'90. To be published in NIM B (1991).Google Scholar
5. Pearton, S.J., Hobson, W.S., Neida, A.E. Von, Haegel, N.M., Jones, K.S., Morris, N. and Sealy, B.J., Mat.Res.Soc.Symp.Proc. 157, 665 (1990).Google Scholar
6. Davies, D.E., J.Cryst.Growth 54, 150 (1981); D.E. Davies, Nucl.Instr.Meth. 127/8, 387 (1985).Google Scholar
7. Sadana, D.K., Choksi, H., Washburn, J., Byrne, P.F. and Cheung, N.W., Appl.Phys. Lett. 44. 301 (1984).Google Scholar
8. Johnson, S.T., Williams, J.S., Nygren, E. and Elliman, R.G., J.Appl.Phys. 64, 6567 (1988).Google Scholar
9. Jones, K.S. and Santana, C.J., J.Mat.Res. (submitted).Google Scholar
10. Brice, D.K. “Ion Implantation Range and Energy Deposition Distributions”, (Plenum Press, N.Y., 1975) p. 1.Google Scholar
11. Cullis, A.G., Chew, N.G., Whitehouse, C.R., Jacobson, D.C., Poate, J.M. and Pearton, S.J., Appl.Phys.Lett. 55, 1211 (1989).Google Scholar
12. Johnson, S.T., Ph.D. thesis, University of Melbourne (1989).Google Scholar
13. Wie, C.R., T. Vreeland and Tombrello, T.A., Nucl.Inst.Meth. B16, 44 (1986).Google Scholar
14. Lang, D.V., Logan, R.A. and Kimerling, L.C., Phys.Rev. B15, 4874 (1977).Google Scholar
15. Kular, S.S., Sealy, B.J., Stephens, K.G., Sadana, D. and Booker, G.R., Solid State Elect. 23, 831 (1980).Google Scholar
16. Fletcher, J., Narayan, J. and Lowndes, D.H., Inst.Phys.Conf.Ser. 60, 121 (1981).Google Scholar
17. Poate, J.M. and Williams, J.S., in “Ion Implantation and Beam Processing”, ed. Williams, J.S. and Poate, J.M. (Academic Press, 1984) p. 13.Google Scholar
18. Elliman, R.G., Linnros, J. and Brown, W.L., Mat.Res.Soc.Symp.Proc. 100, 363 (1988).Google Scholar
19. Deppe, D.G. and Holonyak, N., J.Appl.Phys. M4, R93 (1988).Google Scholar
20. Mei, P., Venkatesan, T.N.C., Schwarz, S.A., Stoffel, N.G., Harbison, J.P., Hart, D.L. and Florez, L.A., Appl.Phys.Lett. 52, 1487 (1988).Google Scholar
21. Williams, J.S., Elliman, R.G., Johnson, S.T., Sengupta, D.K. and Zemanski, J.M., Mat. Res.Soc.Symp.Proc. 144, 355 (1989).Google Scholar
22. TRIM (1988). Ziegler, J.F., Biersack, J.P. and Littmark, U., “The Stopping and Range of Ions in Solids”, Vol.1, Pergamon Press, New York, (1986) p.141.Google Scholar
23. Sadana, D.K., Nucl.Instr.Meth. B7/8, 375, (1985).CrossRefGoogle Scholar
24. Williams, J.S. and Pearton, S.J., Mat.Res.Soc.Symp.Proc. 35, 427 (1985).Google Scholar
25. Ridgway, M.C., Palmer, G.R., Elliman, R.G., Davies, J.A. and Williams, J.S., Appl. Phys.Lett. (in press).Google Scholar
26. Williams, J.S., Ridgway, M.C., Elliman, R.G., Davies, J.A., Johnson, S.T. and Palmer, G.R., Nucl.Instr.Meth. (in press, 1990).Google Scholar