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MeV Helium Microbeam Analysis: Applications to Semiconductor Structures

Published online by Cambridge University Press:  22 February 2011

R. A. Brown ,
J. C. McCallum ,
C. D. McKenzie  and
J. S. Williams
R. A. Brown
Affiliation:
School of Physics, University of Melbourne, Parkville 3052, Australia.
J. C. McCallum
Affiliation:
School of Physics, University of Melbourne, Parkville 3052, Australia.
C. D. McKenzie
Affiliation:
School of Physics, University of Melbourne, Parkville 3052, Australia.
J. S. Williams
Affiliation:
Microelectronics Technology Centre, R.M.I.T. Melbourne 3000, Australia.
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Abstract

We have employed an MeV He+ microbeam for the analysis of micron-scale semiconductor structures. The analysis combines a unique beam scanning and mapping capability with powerful ion beam techniques such as particleinduced x-ray emission, Rutherford backscattering and ion channeling. These analysis capabilities are applied to the measurement of dopant profiles in polycrystalline resistors, identification of micro-alloying in metal-GaAs contacts and damage/atom location in individual polycrystalline silicon grains. The latter application utilises the newly-developed technique of channeling contrast microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 403
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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