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Metastable Non-Equilibrium Conductance States in Doping-Modulated a-Si:H Multilayers

Published online by Cambridge University Press:  26 February 2011

H. Fritzsche ,
S.-H. Yang  and
J. Takada
H. Fritzsche
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637
S.-H. Yang
Affiliation:
Department of Physics Education, Kyungpook National University, Daegu 635, Korea
J. Takada
Affiliation:
Central Research Lab., Kanegafuchi Chemical Industries Co., Kobe 652, Japan
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Abstract

In doping-modulated a-Si:H multilayers metastable excess conductance states can be excited by brief illumination. In addition to these so-called persistent photoconductivities (PPC) we observe new metastable conductance states by bias-cooling the dopingmodulated multilayers from a temperature Ta≥130° C. These metastable states exhibit greatly different nonlinear current-voltage characteristics both parallel and perpendicular to the layers. Furthermore, the magnitude of the PPC as well as the relaxation of the PPC to equilibrium are strongly affected by applying a bias during illumination and during relaxa-tion, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 275
Copyright
Copyright © Materials Research Society 1988

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References

1. Sheinkman, M.K. and Shik, A.Ya., Sov. Phys. Semicond. 10, 128 (1976).Google Scholar
2. Vateva, E. and Nesheva, D., J. Non-Cryst. Solids 90, 497 (1987).Google Scholar
3. Abeles, B. and Tiedje, T., Phys. Rev. Lett. 51, 2003 (1983).Google Scholar
4. Kakalios, J. and Fritzsche, H., Phys. Rev. Lett. 53, 1602 (1984).Google Scholar
5. Agarwal, S.C. and Guha, S., J. Non-Cryst. Solids 77/78, 1097 (1985).Google Scholar
6. Ley, L. in “Amorphous Semiconductors” Eds. Fritzsche, H., Han, D.-X. and Tsai, C.C. (World Scientific, Singapore, 1987) p. 257.Google Scholar
7. Lee, Ch. and Choi, S.-H. in Proc. KOSFF/NSF Joint Seminar, “The Physics of Semiconductor Materials and Applications”, Eds. Lee, Ch. and Paul, W. (Korea Advances Inst. of Science and Technology, Seoul, 1987) p. 17.Google Scholar
8. Agarwal, S.C. and Guha, S., Phys. Rev. B31, 554 (1985).Google Scholar
9. Chen, K.J. and Fritzsche, H., in “Amorphous Semiconductors” Eds. Fritzsche, H., Han, D.-X. and Tsai, C.C. (World Scientific, Singapore, 1987) p. 243.Google Scholar
10. Mell, H. and Beyer, W., J. Non-Cryst. Solids, 59/60, 405 (1983).Google Scholar
11. Choi, S.-H., Yoo, B.-S. and Lee, Ch., Phys. Rev. B36, 6479 (1987).Google Scholar
12. Kakalios, J., Fritzsche, H. and Narasimhan, K.L., AIP Conf. Proc. 120, 425 (1984).Google Scholar
13. Takada, J. and Fritzsche, H., J. Non-Cryst. Solids 97/98, 907 (1987).Google Scholar
14. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
15. Street, R.A. and Zesch, J., Phil. Mag. B34, 6014 (1986); R.A. Street, J. Kakalios, C.C. Tsai and T.M. Hayes, Phys. Rev. B35, 1316 (1987).Google Scholar
16. Kakalios, J. and Street, R.A., J. Non-Cryst. Solids 97/98, 767 (1987).Google Scholar
17. Kakalios, J., Phil. Mag. B54, 199 (1986).Google Scholar
18. Kakalios, J. and Fritzsche, H., J. Non-Cryst. Solids 77/78, 1101 (1985).Google Scholar
19. Street, R.A., Zesch, J.C. and Thompson, M.J., Appl. Phys. Lett. 43, 672 (1983).Google Scholar
20. Agarwal, S.C. and Guha, S., in “Disordered Semiconductors” Eds. Kastner, M.A., Thomas, G.A. and Ovshinsky, S.R., (Plenum Press, N.Y. 1987) p. 519.Google Scholar
21. Kakalios, J. and Street, R.A., in “Disordered Semiconductors,” Eds. Kastner, M.A., Thomas, G.A. and Ovshinsky, S.R. (Plenum Press, N.Y. 1987) p. 529.Google Scholar