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Metamorphic GaInP-GaInAs Layers for Photovoltaic Applications

Published online by Cambridge University Press:  01 February 2011

A. W. Bett ,
C. Baur ,
F. Dimroth  and
J. Schöne
A. W. Bett
Affiliation:
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany, [email protected]
C. Baur
Affiliation:
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany, [email protected]
F. Dimroth
Affiliation:
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany, [email protected]
J. Schöne
Affiliation:
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany, [email protected] Technische Fakultät der Christian-Albrechts-Universität zu Kiel, Kaiserstrasse 2, 24143 Kiel
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Abstract

GaxIn1−xAs and GayIn1−yP layers were grown lattice mismatched to GaAs and Ge by low-pressure metal organic vapor phase epitaxy (LP-MOPVE). These materials are very promising for further increasing the efficiency of monolithic triple-junction solar cells. Different buffer layer structures were realized. Transmission electron microscopy and x-ray diffraction analysis were used to characterize the quality of the crystal. Both linear and step-graded buffers in GaxIn1−xAs were successfully used under an active solar cell structure. GayIn1−yP as buffer material showed a worse performance. Excellent solar cell performance was achieved for lattice mismatched single-, dual- and triple-junction solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L6.4
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. King, R. R., Fetzer, C. M., Colter, P. C., Edmondson, K. M., Ermer, J. H., Cotal, H. L., Yoon, H., Stavrides, A. P., Kinsey, G., Krut, D. D., and Karam, N. H., Proc. of 29th IEEE Photovoltaic Specialists Conference, 776–781 (2002)‥Google Scholar
2. King, R. R., Fetzer, C. M., Edmondson, K. M., Law, D., Colter, P. C., Cotal, H. L., Sherif, R. A., Yoon, H., Isshiki, T., Krut, D. D., Kinsey, G. S., Ermer, J. H., Kurtz, S., Moriarty, T., Kiehl, J., Emery, K., Metzger, W. K., Ahrenkiel, R. K., and Karam, N. H., Metamorphic III-V Materials, Sublattice Disorder, and Multijunction Solar Cells Approaches with over 37% Efficiency, In Proc. 19th European PVSC, 3587–3593 (2004).Google Scholar
3. Yamaguchi, M., Takamoto, T., Agui, T., Kaneiwa, M., Araki, K., Kondo, M., Uozumi, H., Hiramatus, M., Miyazaki, Y., Egami, T., Kemmoku, Y., and Ekins-Daukes, N. J., Japanese Activities of R&D on III-V Concentrator Solar Cells and Modules, In Proc. 19 European PVSEC 2014–2017 (2004).Google Scholar
4. Letay, G. and Bett, A. W., In Proc. 17th European Photovoltaic Solar Energy Conference, 178–180 (2001).Google Scholar
5. Emery, K., Myers, D., and Kurtz, S., In Proc. 29th IEEE PVSC 840–843 (2002).Google Scholar
6. Kurtz, S. R., Klem, J. F., Allerman, A. A., Sieg, R. M., Seager, C. H., and Jones, E. D., Appl. Phys. Lett. 80, 1379–1381 (2002).Google Scholar
7. Baur, C., Bett, A. W., Dimroth, F., Riesen, S. v., Kunert, B., Traversa, M., Volz, K., and Stolz, W., in Proc. WCPEC-3,. 667–670 (2003).Google Scholar
8. Dimroth, F., Lanyi, P., Schubert, U., and Bett, A. W., Journal of Electronic Materials 29 42–46 (2000).Google Scholar
9. Dimroth, F., Schubert, U., and Bett, A. W., IEEE Electron Device Letters 21 209–211 (2000).Google Scholar
10. Dimroth, F., Lanyi, P., Meusel, M., Schubert, U., and Bett, A. W. In Proc. 16th European Photovoltaic Solar Energy Conference, 106–109 (2000).Google Scholar
11. Sinharoy, S., Patton, M. O., Valko, T. M., and Weizer, V. G., Progr. Photovolt. 10 427–432. (2002)Google Scholar
12. Gonzalez, D., Araujo, D., Aragon, G., and Garcia, R., Appl. Phys. Lett. 72 1875–7 (1998).Google Scholar
13. Romanato, F., Napolitani, E., Carnera, A., Drigo, A. V., Lazzarini, L., Salviati, G., Ferrari, C., Bosacchi, A., and Franchi, S., J. Appl. Phys. 86 4748–55 (1999).Google Scholar
14. Bulsara, M. T., Leitz, C., and Fitzgerald, E. A., Appl. Phys. Lett. 72 1608–10 (1998).Google Scholar
15. Araujo, D., Gonzalez, D., Garcia, R., Sacedon, A., and Calleja, E., Appl. Phys. Lett. 67 3632–3634 (1995).Google Scholar
16. King, R. R., Haddad, M., Isshiki, T., Colter, P., Ermer, J., Yoon, H., Joslin, D. E., and Karam, N. H., In Proc. Proceedings of 28th IEEE Photovoltaic Specialists Conference 982–985 (2000).Google Scholar
17. Tanner, B. K., Parbrook, P. J., Whitehouse, C. R., Keir, A. M., Johnson, A. D., Jones, J., Wallis, D., Smith, L. M., Lunn, B., and Hogg, J. H. C., Appl. Phys. Lett. 77 2156–2158 (2000).Google Scholar
18. Yastrubchak, O., Wosiniski, T., Domagla, J. Z., LUsakowska, E., Figielski, T., Pecz, B., and Toth, A. L., Journal of Physics: Condensed Matter 16 S1-S8 (2004).Google Scholar
19. Bourhis, E. and Patriarche, G., Philosophical Magazin Letters 84 373–381 (2004).Google Scholar
20. Green, M. A., Emery, K. A., King, D. L., Igari, S., and Warta, W., Progr. Photovolt. 12 365–372 (2004).Google Scholar
21. Gordon, J. M., Katz, E. A., Feuermann, D., and Huleihil, M., Applied Physics Letters 84 3642–3644 (2004).Google Scholar
22. Riesen, S. v., and Bett, A. W., Degradation study of III-V solar cell for concentrator applications, accepted for publication in Progr. Photovolt (2005)Google Scholar
23. http://www.ioffe.ru/SVA/NSM/Semicond/index.html Google Scholar