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Metal-Organic Chemical Vapour Deposition of II-VI Semiconductor Thin Films Using Single-Source Approach

Published online by Cambridge University Press:  01 February 2011

Mohammad Afzaal ,
David Crouch ,
Paul O'Brien  and
Jin-Ho Park
Mohammad Afzaal
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]; [email protected];
David Crouch
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]; [email protected];
Paul O'Brien
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]; [email protected];
Jin-Ho Park
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]; [email protected];
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Abstract

Thin films of CdS and CdSe have been deposited on glass substrates by low pressure metal-organic chemical vapour deposition (LP-MOCVD) using Cd[(EPiPr2)2N]2 (E = S, Se) as single-source precursors. These air-stable precursors are volatile, making them suitable for the deposition of thin films. As-deposited films were crystalline metal chalcogenides, as confirmed by X-ray powder diffraction (XRD), and their morphologies were studied by scanning electron microscopy (SEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 730: Symposium V – Materials for Energy Storage, Generation, and Transport , 2002 , V3.5
Copyright
Copyright © Materials Research Society 2002

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