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Metal-Organic Chemical Vapor Deposition (MOCVD) of GeSbTe-based Chalcogenide Thin Films

Published online by Cambridge University Press:  01 February 2011

Gary S. Tompa ,
Shangzhu Sun ,
Catherine E Rice ,
Joe Cuchiaro  and
Edwin Dons
Gary S. Tompa
Affiliation:
[email protected], Structured Materials Ind., Inc., 201 Circle Drive N, Unit 102, Piscataway, NJ, 08854, United States
Shangzhu Sun
Affiliation:
[email protected], Structured Materials Ind., Inc., 201 Circle Drive N., Unit 102, Piscataway, NJ, 08854, United States
Catherine E Rice
Affiliation:
[email protected], Structured Materials Ind., Inc., 201 Circle Drive N., Unit 102, Piscataway, NJ, 08854, United States
Joe Cuchiaro
Affiliation:
[email protected], Structured Materials Ind., Inc., 201 Circle Drive N., Unit 102, Piscataway, NJ, 08854, United States
Edwin Dons
Affiliation:
[email protected], Structured Materials Ind., Inc., , 201 Ci rcle Drive N., Unit 102, Piscataway, NJ, 08854, United States
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Abstract

Chalcogenide Random Access Memory (C-RAM) has shown significant promise in combining the desired attributes of an ideal memory, including: nonvolatility, fast read/write/erase speed, low read/write/erase voltage/power, high endurance, and radiation hardness. Current C-RAM production technology relies on sputtering to deposit the active chalcogenide layer. The sputtering process leads to difficulties in meeting requirements for device conformality (in particular – filling vias), film adherence, compositional control, wafer yield, and surface damage. Ultimately, a viable CVD manufacturing process is needed for high-density products to realize the full potential of C-RAM. In this work, we discuss the Metal-Organic Chemical Vapor Deposition (MOCVD) tool technology used to produce the films and report the materials properties of GeSbTe-based chalcogenide thin films grown in small research scale and in large production scale MOCVD reactors. Films were grown at low pressures at temperatures ranging from 350 C to 600 C. X-Ray Fluorescence (XRF) and Auger Electron Spectroscopy (AES) were performed and determined that the film composition is controllable and uniform.

Keywords

metalorganic depositionGethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I10-08
Copyright
Copyright © Materials Research Society 2007

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References

1 http://www.vnunet.com/vnunet/news/2153180/flash-memory-market-pass-20bn Google Scholar
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4PCT/US06/46524, Dons, E. M., Tompa, G. S., Rice, C. E., and Cuchiaro, J.D., 2005 priority.Google Scholar