Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-08T00:32:02.166Z Has data issue: false hasContentIssue false
  • English
  • Français

Metal Oxide Nanowire Growth via Intermediate Hydroxide Formation:A Thermochemical Assessment

Published online by Cambridge University Press:  18 December 2012

Avi Shalav  and
Robert G. Elliman
Avi Shalav
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT0200, Australia
Robert G. Elliman
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT0200, Australia
Get access

Abstract

In this study we apply reaction thermodynamics to show that a significant volatile hydroxide vapor partial pressure forms at a metal-oxide interface and is a likely precursor source for nanowire growth. The growth of WO3 and CuO nanowires are used as examples for reactions dependent on only H2O and O2+H2O, respectively. Optimal temperatures, H2O (and O2) partial pressures for volatile hydroxide formation are calculated and experimentally investigated. We conclude that metal oxide nanowires can be readily grown at relatively low temperatures (close to or less than 500oC) over short anneal times (tens of minutes). The growth of these metal oxide nanowires, with many oxidation states, by this simple thermal technique is readily suited for a range of emergent large surface area nanostructured optical and electrical applications, including sensing, photocatalysis and ultracapacitors.

Keywords

metaloxidenanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 191 - 196
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Rackauskas, S., Nasibulin, A. G., Jiang, H., Tian, Y., Kleshch, V. I., Sainio, J., Obraztsova, E. D., Bokova, S. N., Obraztsov, A. N. and Kauppinen, E. I., Nanotech. 20 (16), 165603 (2009).CrossRefGoogle Scholar
Young, D. J., High Temperature Oxidation and Corrosion of Metals. (Elsevier, 2008).Google Scholar
Kim, T. H., Shalav, A. and Elliman, R. G., J. Appl. Phys. 108 (7), 076172 (2010).Google Scholar
Shalav, A., Collin, G. H., Yang, Y., Kim, T.-H. and Ellimam, R. G., J. Mat. Res. 17(4), 2240–2246 (2011).CrossRefGoogle Scholar
Shalav, A., Kim, T. and Elliman, R., IEEE Sel. Top. Quant. Elect., 17 (4), 785–793 (2011).CrossRefGoogle Scholar
Lassner, E. and Schubert, W.-D., Tungsten. Properties, Chemistry, Technology of the Element, Alloys, and Chemical Components. (Plenum Publishers, 1999).Google Scholar
Yuan, L. and Zhou, G. W., J. Electrochem. Soc. 159 (4), C205–C209 (2012).CrossRefGoogle Scholar
Schubert, W. D., Lux, B. and Zeiler, B., Int. J. Refract. Met. & Hard Mater. 13 (1–3), 119–135 (1995).CrossRefGoogle Scholar
Wang, J. P. and Cho, W. D., ISIJ International 49 (12), 1926–1931 (2009).CrossRefGoogle Scholar
Zhang, K. L., Rossi, C., Tenailleau, C., Alphonse, P. and Chane-Ching, J. Y., Nanotechnology 18 (27), 275607 (2007).CrossRefGoogle Scholar
Elliman, R. G., Kim, T. H., Shalav, A. and Fletcher, N. H., J. Phys. Chem. C 116 (5), 3329–3333 (2012).CrossRefGoogle Scholar
Shalav, A. and Elliman, R. G., in preparation. Google Scholar