Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-28T19:35:04.870Z Has data issue: false hasContentIssue false

Metal Organic Chemical Vapor Deposition of Zinc Oxide

Published online by Cambridge University Press:  01 February 2011

William E. Fenwick
Affiliation:
[email protected], Georgia Institute of Technology, Electrical Engineering, United States
Vincent T. Woods
Affiliation:
[email protected], Georgia Institute of Technology, Electrical Engineering, United States
Ming Pan
Affiliation:
[email protected], Cermet Inc, United States
Nola Li
Affiliation:
[email protected], Georgia Institute of Technology, Electrical Engineering, United States
Matthew H. Kane
Affiliation:
[email protected], Georgia Institute of Technology, Materials Science and Engineering, United States
Shalini Gupta
Affiliation:
[email protected], Georgia Institute of Technology, Electrical Engineering, United States
Varatharajan Rengarajan
Affiliation:
[email protected], Cermet Inc, United States
Jeff Nause
Affiliation:
[email protected], Cermet Inc, United States
Ian T. Ferguson
Affiliation:
[email protected], Georgia Institute of Technology, Electrical Engineering, United States
Get access

Abstract

Thin films of ZnO were grown by metal organic chemical vapor deposition (MOCVD) in a vertical injection rotating disk reactor (RDR) system on sapphire substrates. Kinetics of ZnO growth by MOCVD were studied and an optimal growth window for a RDR tool was determined. Experimental growth conditions were chosen based on calculations of Reynolds Number (Re) and mixed convection parameter in order to select a growth window with stable gas flow and uniform heat transfer. Growth parameters were systemically varied within this window to determine the optimal growth conditions for this MOCVD tool and to study how these parameters affect film growth and quality. Properties of ZnNiO films grown by MOCVD were also studied to determine the effects of Ni incorporation on structural, optical, and magnetic properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Yu, S. F., Clement, Yuen, Lau, S. P. et al. , “Zinc oxide thin-film random lasers on silicon substrate,” Applied Physics Letters 84 (17), 32443246 (2004).CrossRefGoogle Scholar
2 Schwartz Dana, A., Kittilstved Kevin, R., and Gamelin Daniel, R., “Above-room-temperature ferromagnetic Ni[sup 2+]-doped ZnO thin films prepared from colloidal diluted magnetic semiconductor quantum dots,” Applied Physics Letters 85 (8), 13951397 (2004).CrossRefGoogle Scholar
3 Dadgar, A., Oleynik, N., Forster, D. et al. , “A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0 0 0 1),” Journal of Crystal Growth 267 (1–2), 140144 (2004).CrossRefGoogle Scholar
4 Triboulet, R. and Perriere, Jacques, “Epitaxial growth of ZnO films,” Progress in Crystal Growth and Characterization of Materials 47 (2–3), 65 (2003).CrossRefGoogle Scholar
5 Sato, K. and Katayama-Yoshida, H., “First Principles Materials Design for Semiconductor Spintronics,” Semiconductor Science and Technology 17, 367376 (2002).CrossRefGoogle Scholar
6 Dietl, T., Ohno, H., Matsukura, F. et al. , “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science 287 (5455), 10191021 (2000).CrossRefGoogle ScholarPubMed
7 Mosbacker, H. L., Strzhemechny, Y. M., White, B. D. et al. , “Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO,” Applied Physics Letters 87 (1), 012102 (2005).CrossRefGoogle Scholar
8 Fang, Zebo, Wang, Yinyue, Xu, Dayin et al. , “Blue luminescent center in ZnO films deposited on silicon substrates,” Optical Materials 26 (3), 239 (2004).CrossRefGoogle Scholar