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Mems as Temperature Sensors During High Temperature Processing

Published online by Cambridge University Press:  10 February 2011

H. Tada ,
A. R. Abramson ,
P. Nieva ,
P. Zavracky ,
I. N. Miaoulis  and
P. Y. Wong
H. Tada
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, MA 02155
A. R. Abramson
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, MA 02155
P. Nieva
Affiliation:
Microfabrication Laboratory, Northeastern University, Boston, MA 02115
P. Zavracky
Affiliation:
Microfabrication Laboratory, Northeastern University, Boston, MA 02115
I. N. Miaoulis
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, MA 02155
P. Y. Wong*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, MA 02155
*
*Author to whom all correspondence should be addressed
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Abstract

In high temperature processing of microelectronics such as rapid thermal processing (RTP), an accurate measurement of temperature is critical in fabricating defect-free devices. Currently, temperatures during such processes are measured using thermocouples or pyrometers. However, accurate measurements with thermocouples are troublesome due to the difficulties in holding the thermocouples in place and maintaining good thermal contact. A further drawback for thermocouples is that they are highly intrusive. For pyrometers, optical interference effects and partial transparency limit their applicability and the local temperature of wafers near the electronic devices are difficult to measure using pyrometer due to relatively large spot size. Microelectromechanical systems (MEMS) technology is being used in developing innovative temperature sensor (T-MEMS), which allow an ex-situ examination of the maximum temperature reached during a thermal process by creating a permanent change in structure at high temperatures. The performance of the device relies on the thermophysical properties of the materials; specifically, the Young's modulus, thermal expansion coefficient, and the ultimate strength must be considered for silicon, and silicon nitride. Through careful experimental design and accurate modeling of their structural behavior, the high-temperature material properties can be determined using the T-MEMS and calibrated furnaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 518: Symposium N – Microelectromechanical Structures for Materials Research , 1998 , 161
Copyright
Copyright © Materials Research Society 1998

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