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Mechanism for Improved Quality B12As2 Epitaxial Films on (0001) 4H-SiC Substrates by Tilting toward [1-100] Direction

Published online by Cambridge University Press:  01 February 2011

Yu Zhang ,
Hui Chen ,
Michael Dudley ,
Yi Zhang ,
James Edgar ,
Yinyan Gong ,
Silvia Bakalova ,
Martin Kuball ,
Lihua Zhang  and
Dong Su
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Yu Zhang
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Old Engineering Building, Room 311, Stony Brook, New York, 11790, United States, 6317421987
Hui Chen
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Michael Dudley
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Yi Zhang
Affiliation:
[email protected], Kansas State University, Department of Chemical Engineering, Manhattan, Kansas, United States
James Edgar
Affiliation:
[email protected], Kansas State University, Chemical Engineering, Manhattan, Kansas, United States
Yinyan Gong
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, Bristol, United Kingdom
Silvia Bakalova
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, Bristol, United Kingdom
Martin Kuball
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, Bristol, United Kingdom
Lihua Zhang
Affiliation:
[email protected], Brookhaven National Laboratory, Center for Functional Materials, Upton, New York, United States
Dong Su
Affiliation:
[email protected], Brookhaven National Laboratory, Center for Functional Materials, Upton, New York, United States
Kim Kisslinger
Affiliation:
[email protected], Brookhaven National Laboratory, Center for Functional Materials, Upton, New York, United States
Yimei Zhu
Affiliation:
[email protected], Brookhaven National Laboratory, Center for Functional Materials, Upton, New York, United States
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Abstract

In this work, 4H-SiC substrates intentionally misoriented from the (0001) plane toward [1-100] direction are shown to eliminate rotational twinning in icosahedral boron arsenide (B12As2, abbreviated here as IBA) epitaxial films. Previous studies of IBA on other substrates, including (100), (110), (111) Si and (0001) 6H-SiC, produced polycrystalline and twinned epilayers. Comparisons of IBA on on-axis and off-axis c-plane 4H-SiC by synchrotron white beam x-ray topography (SWBXT), and high resolution transmission electron microscopy (HRTEM) confirm the single crystalline and much higher quality of the films on the latter substrates. Furthermore, no intermediate layer between the epilayer and substrate was observed for IBA on off-axis 4H-SiC. Steps formed on the off-axis 4H-SiC substrate surface before deposition cause the film to adopt a single orientation, a process that is not seen with substrates with either no misorientation, or those tilted toward the [11-20] direction. This work demonstrates that c-plane 4H-SiC with 7° offcut toward (1-100) is potentially a good substrate choice for the growth of high-quality, untwinned B12As2 epilayers for future device applications.

Keywords

epitaxytransmission electron microscopy (TEM)nucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B04-02
Copyright
Copyright © Materials Research Society 2010

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