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Mechanical Properties of 0.1 Micron Thick Simox Film Measured Using on-Chip Tensile Test System

Published online by Cambridge University Press:  15 March 2011

J. Amano
Affiliation:
Dept. of Microsystem Engineering, Nagoya Univ., Furoh-cho, Chikusa, Nagoya 464-8603, Japan
T. Ando
Affiliation:
Dept. of Microsystem Engineering, Nagoya Univ., Furoh-cho, Chikusa, Nagoya 464-8603, Japan
M. Shikida
Affiliation:
Dept. of Microsystem Engineering, Nagoya Univ., Furoh-cho, Chikusa, Nagoya 464-8603, Japan
K. Sato
Affiliation:
Dept. of Microsystem Engineering, Nagoya Univ., Furoh-cho, Chikusa, Nagoya 464-8603, Japan
T. Tsuchiya
Affiliation:
Toyota Central R&D Labs Inc., Nagakute, Aichi 480-1192, Japan
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Abstract

We evaluated the mechanical properties of a very thin single-crystal-silicon film 140 nm thick fabricated from a SIMOX wafer using an on-chip tensile testing method. The silicon specimen oriented in the <110> direction was integrated with a loading mechanism on the same chip, which was fabricated in three etching steps. The strain in the film was measured using a newly developed tensile testing system having a two-field-of-view microscope that allowed us to observe the elongation of the specimen directly. The measured fracture strain was distributed in the range of 2.4-3.2%, which is narrower than the range of 1.3-3.5% for a thicker 5-νm film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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