Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-02T20:00:49.580Z Has data issue: false hasContentIssue false

Mechanical and Tribological Properties of a-GeCx Films Deposited by DC-Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

L. G. Jacobsohn
Affiliation:
Departamento de Fisica, PUC-Rio, Rio de Janeiro, 22452-970, RJ, Brazil.
D. C. Reigada
Affiliation:
Departamento de Fisica, PUC-Rio, Rio de Janeiro, 22452-970, RJ, Brazil.
F. L. Freire Jr.
Affiliation:
Departamento de Fisica, PUC-Rio, Rio de Janeiro, 22452-970, RJ, Brazil.
R. Prioli
Affiliation:
CBPF, Rio de Janeiro, 22290-180, RJ, Brazil.
S. I. Zanette
Affiliation:
CBPF, Rio de Janeiro, 22290-180, RJ, Brazil.
A. O. Caride
Affiliation:
CBPF, Rio de Janeiro, 22290-180, RJ, Brazil.
F. C. Nascimento
Affiliation:
Departmento de Fisica, UFPR, Curitiba, 81531-990, RJ, Brazil.
C. M. Lepienski
Affiliation:
Departmento de Fisica, UFPR, Curitiba, 81531-990, RJ, Brazil.
Get access

Abstract

Amorphous carbon-germanium films were grown by dc-magnetron sputtering at different argon plasma pressures ranging from 0.17 and 1.4 Pa. The water-cooled sample holder was grounded. The film thickness were typically 0.5 μm. The ratio between germanium and carbon atomic concentration ranges up to 2.8, as measured by Rutherford backscattering spectrometry (RBS). Elastic recoil detection technique was used to measure hydrogen contamination. The film hardness was measured by nanoindentation techniques and the internal stress was determined by the bending of the substrate. The incorporation of Ge reduces both the film hardness and the internal stress. Hardness and internal stress increases when the films are deposited in lower pressures. Atomic Force Microscopy (AFM) was used to measure the surface roughness, which was found to be insensitive to the pressure and to the Ge content. A possible influence of the thickness on the morphology of pure carbon films is discussed. The friction coefficient measured by AFM is independent on the film composition within experimental errors.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Robertson, J., Progr. Solid State Chem. 21, 199 (1991).Google Scholar
2.Franceschini, D.F., Achete, C.A. and Freire, F.L. Jr., Appl. Phys. Lett. 60, 3229 (1992).Google Scholar
3.Neto, A.L. Baia, Santos, R.A., Freire, F.L. Jr., Camargo, S.S. Jr., Carius, R., Finger, F. and Beyer, W., Thin Solid Films 293, 206 (1997).Google Scholar
4.Rubin, M., Hopper, C.B., Cho, N-H. and Bhushan, B., J. Mater. Res. 5,2538 (1990).Google Scholar
5.Mounier, E. and Pauleau, Y., Diamond Relat. Mater. 6, 1182 (1997).Google Scholar
6.Oguri, K. and Arai, T., Thin Solid Films 208, 158 (1992).Google Scholar
7.Marques, F.C., Vilcarromero, J. and Freire, F.L. Jr., communication presented at the 1997 MRS Spring Meeting.Google Scholar
8.Jacobsohn, L.G., Freire, F.L. Jr. and Mariotto, G., Diamond Relat. Mater. (to be published).Google Scholar
9.Oliver, W.C. and Pharr, G.M., J. Mater. Res. 7, 1564 (1992).Google Scholar
10.Somekh, R.E., J. Vac. Sci. Technol. A 2, 1285 (1984).Google Scholar
11.Lifshitz, Y., Kasi, S.R., Rabalais, J.W. and Eckstein, W., Phys. Rev. B 41, 10468 (1990).Google Scholar
12.Angus, J.C. and Jansen, F., J. Vac. Sci. Technol. A 6, 1778 (1988).Google Scholar
13.Donovan, T.M. and Heinemann, K., Phys. Rev. Lett. 27, 1794 (1971).Google Scholar
14.Puchert, M.K., Timbrell, P.Y., Lamb, R.N. and McKenzie, D.R., J. Vac. Sci. Technol. A 12, 727 (1994).Google Scholar
15.Jacobsohn, L.G., Freire, F.L. Jr and Reigada, D.C., to be published.Google Scholar