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Measurements of Light-Induced Degradation in A-Si, Ge:H, F Alloys,

Published online by Cambridge University Press:  28 February 2011

J. Kolodzey ,
S. Aljishi ,
Z E. Smith ,
V. Chu ,
R. Schwarz  and
S. Wagner
S. Aljishi
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
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Abstract

The effects of illumination on the optical and electronic properties of narrow gap hydrogenated and fluorinated amorphous Si-Ge (a-Si1-xGex:H, F) alloys have been evaluated. A series of alloys with optical gaps ranging from 1.30 eV to 1.64 eV has been light soaked at ∼1 sun intensity for 354 hours. Measurements of sub-gap absorption, photo- and dark conductivities and dark conductivity activation energy were made on alloys in the annealed and the light-soaked states. The results indicate that samples with optical gaps ≳ 1.4 eV degrade significantly. The 1.3 eV sample shows no degradation in its optical or electronic properties except for a factor of 5 increase in the dark conductivity.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 237
Copyright
Copyright © Materials Research Society 1986

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References

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