Hostname: page-component-5cf477f64f-zrtmk Total loading time: 0 Render date: 2025-04-05T09:39:27.366Z Has data issue: false hasContentIssue false
  • English
  • Français

MEASUREMENT OF THE BANDGAP OF GexSi1−x/Si STRAINED-LAYER HETEROSTRUCTURES

Published online by Cambridge University Press:  28 February 2011

D. V. LANG ,
R. PEOPLE ,
J. C. BEAN  and
A. M. SERGENT
D. V. LANG
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. PEOPLE
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. C. BEAN
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. M. SERGENT
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

We have used photocurrent spectroscopy to measure the optical absorption spectra of coherently strained layers of GexSi1−x grown on {001} Si by molecular beam epitaxy. A dramatic lowering of the indirect bandgap, relative to that of unstrained bulk Ge-Si alloys, is observed. Our results for 0 < × < 0.7 are in remarkably good agreement with recent calculations of the effects of misfit strain on the band edges of coherently strained Ge-Si heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 359
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Braunstein, R., Moore, A. R., and Herman, F., Phys. Rev. 109 695 (1958).CrossRefGoogle Scholar
[2] People, R., Bean, I. C., Lang, D. V., Sargent, A. M., Stormer, H. L., Wecht, K. W., Lynch, R. T. and Baldwin, K., Appl. Phys. Letter, 45,1231 (1984).CrossRefGoogle Scholar
[3] Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S., and Robinson, I. K., J. Vac. Sci. Technol. A2, 436 (1984).CrossRefGoogle Scholar
[4] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., and Herzog, H. J., Phys. Rev. Lett. 54,2441 (1985).Google Scholar
[5] Cerdeira, F., Pinczuk, A., Bean, J. C., Batlogg, B., and Wilson, B. A., Appl. Phys. Letter, 451138 (1984).Google Scholar
[6] Osbourn, G. C., J. Appl. Phys. 53, 1586 (1982)CrossRefGoogle Scholar
[7] People, R., Phys. Rev. B, 32,1405 (1985).CrossRefGoogle Scholar
[8] Hensel, J. C. and Feher, G., Phys. Rev. 129,1041 (1963).Google Scholar
[9] Hensel, J. C. and Suzuki, K., Phys. Rev. B, 9, 4219 (1974).CrossRefGoogle Scholar