Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-07T23:23:22.219Z Has data issue: false hasContentIssue false

Measurement of Stress Relaxation in Thin Aluminum Metallizations by Continuous Indentation and X-Ray Techniques

Published online by Cambridge University Press:  16 February 2011

M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
W. R. LaFontaine
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. A. Paszkiet
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
R. D. Black
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

Thin aluminum films deposited on silicon substrates are representative of materials systems used in integrated circuit technology. Large stresses in such systems usually arise from thermal expansion mismatch between the thin film and the substrate, and constitute an important reliability concern.

X-ray and continuous indentation testing were used to measure post-heat treatment stresses in a 0.3 μm thick aluminum film on a silicon substrate. The sample was heat treated at 450°C for one hour in an inert atmosphere, after which the stress relaxation was followed as a function of time. The stress data gathered by the two techniques agree very closely during a time span of about 100 hours.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Jackson, M.S. and Li, C.-Y., Acta Metall., 30, 1993 (1982).Google Scholar
[2] Li, C.-Y., Black, R.D., and LaFontaine, W.R., Appl. Phys. Lett. 4, 31 (1988).Google Scholar
[3] Hinode, K., Owada, N., Nishida, T., and Mukai, K., J. Vac. Sci. Technol. B 5, 18 (1987).Google Scholar
[4] Stone, D., LaFontaine, W.R., Wu, T.-W, Alexopoulos, P., and Li, C.-Y., J. Mater. Res., 3, 141 (1988).Google Scholar
[5] Doerner, M.F. and Nix, W.D., J. Mat. Res., 1, 601 (1986).Google Scholar
[6] LaFontaine, W.R., Yost, B., and Li, C.-Y., J. Mater. Res. 4, (1990).Google Scholar
[7] Korhonen, M.A. and Paszkiet, C.A.. Scripta. Metall., vol 23,(8), 1449 (1989).Google Scholar
[8] Doerner, M.F., and Brennan, S., J. Appl. Phys., 63, 126 (1988).Google Scholar
[9] Shute, C.J., Cohen, J.B., Jeannotte, D.A., Mater. Res. Symp. Proc., vol 130, (1989) 29.Google Scholar
[10] Noyan, L.C. and Cohen, J.B., Residual Stress: Measurement by Diffraction and Interpretation, Springer-Verlag (1987)Google Scholar
[11] Paszkiet, C.A., Korhonen, M.A., and Li, Che-Yu, MRS Conf., San Francisco, CA, Apr. 16–0 (1990)Google Scholar
[12] Moller, H. and Martin, G., Mitt. Kaiser Wilhelm Inst. Eisenforsch. 21, Duesseldorf, 261 (1939)Google Scholar
[13] Tabor, D., The Hardness of Metals, Clarendon Press, (1951).Google Scholar
[14] Toenshoff, H.K., Brinkmeister, E., and Noelke, H., Z. Metallkunde 72, 349 (1981)Google Scholar
[15] Simes, T.R., Mellor, S.C., and Hills, D.A., J. Strain Anal. 19, 135 (1984)Google Scholar
[16] Doerner, M.F., Gardner, D.S., and Nix, W.D., J. Mater. Res. 1, 845 (1986)Google Scholar