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Measured Lattice Damage and Optical Index Change in KNbo3

Published online by Cambridge University Press:  26 February 2011

R. Irmscher
Affiliation:
ISI-Forschungszentrum (KFA) Jülich, D-5170 Jülich, Germany
D. Fluck
Affiliation:
Inst. Quantum Electronics, Swiss Fed. Inst. Technology, CH- 8093 Zürich, Switzerland
CH. Buchal
Affiliation:
ISI-Forschungszentrum (KFA) Jülich, D-5170 Jülich, Germany
B. Stritzker
Affiliation:
ISI-Forschungszentrum (KFA) Jülich, D-5170 Jülich, Germany
P. GÜnter
Affiliation:
Inst. Quantum Electronics, Swiss Fed. Inst. Technology, CH- 8093 Zürich, Switzerland
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Abstract

We have used 2-MeV and 200-KeV He implantation into KNbO3 and LiNbO3 single crystals to generate a damaged layer of reduced optical index. MeV implantation enables the formation of optical waveguides of several µm thickness, which have been analyzed by dark and bright line spectroscopy in order to determine the refractive index profiles. In addition, 200-keV implants have been used to model the end-of-range-damage, which was measured by RBS/Channeling. KNbO3 and LiNbO3 show a distinctly different sensitivity of the radiation damage.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

[1] Townsend, P.D., Nucl. Instr. Meth. B46, 18 (1990)Google Scholar
[2] Bremer, T., Heiland, W., Hellermann, B., Hertel, P., Krätzig, E. and Kollewe, D., Ferroelec. Lett. 9, 11 (1988)Google Scholar
[3] Chandler, P.J. and Lama, F.L., Optica Acta 33, 11 (1986)Google Scholar
[4] Ziegler, J.F., Biersack, J.P. and Littmark, U., Stopping and Ranges of Ions in Matter (Pergamon Press, N.Y. 1985)Google Scholar
[5] Strohkendl, F.P., Günter, P., Buchal, Ch. and Irmscher, R., J. Appl. Phys., in press (1990)Google Scholar
[6] Zhang, L., Chandler, P.J., Townsend, P.D., Ferroelec. Lett. 11, 89 (1990)Google Scholar
[7] Gibbons, J.F., Procc. IEEE 60, 1062 (1972)Google Scholar
[8] Destefanis, G.L., Gailliard, J.P., Ligeon, E.L., Vallette, S., Famery, B.W., Townsend, P.D. and Perez, A., J. Appl. Phys. 50, 12 (1979)Google Scholar