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MBE Growth and Characterization of Fe- and Co-Based Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  03 September 2012

B. T. Jonker ,
J. J. Krebs ,
G. A. Prinz ,
X. Liu ,
A. Petrou  and
L. Salamanca-Young
B. T. Jonker
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
J. J. Krebs
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
G. A. Prinz
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
X. Liu
Affiliation:
Dept. of Physics & Astronomy, SUNY Buffalo, NY 14260
A. Petrou
Affiliation:
Dept. of Physics & Astronomy, SUNY Buffalo, NY 14260
L. Salamanca-Young
Affiliation:
Dept. of Chemical & Nuclear Engineering, University of Maryland, College Park, MD 20742
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Abstract

We have grown single crystal zincblende epilayers of the diluted magnetic semiconductors Zn1−xFexSe and Zn1−xCoxSe on GaAs(001) by molecular beam epitaxy. We summarize the growth and the structural, magnetic and optical properties of these materials, and contrast their properties with those of the more well-studied Mn-based family of diluted magnetic semiconductor (DMS) compounds. Both materials exhibit larger values for the band electronmagnetic ion and ion-ion exchange parameters than found in (Zn,Mn)Se. These values are most strongly enhanced in (Zn,Co)Se, which represents the first member of a new Co-based family of DMS compounds. Thus the incorporation of (Zn,Fe)Se and (Zn,Co)Se layers in quantum well and superlattice structures holds very exciting prospects for future work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 151: Symposium G – Growth, Characterization and Properties of Ultrathin Magnetic Films and Multilayers , 1989 , 151
Copyright
Copyright © Materials Research Society 1989

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References

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