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MBE Grown GaAs on Si(100) Studied by Infrared Spectroscopy

Published online by Cambridge University Press:  28 February 2011

T. Eickhoff ,
S. Morley ,
D.R.T. Zahn ,
W. Richter ,
D.A. Woolf ,
D.I. Westwood  and
R.H. Williams
T. Eickhoff
Affiliation:
I.Physikalisches Institut der RWTH Aachen, Sommerfeldstr.28, 5100 Aachen, West Germany.
S. Morley
Affiliation:
I.Physikalisches Institut der RWTH Aachen, Sommerfeldstr.28, 5100 Aachen, West Germany.
D.R.T. Zahn
Affiliation:
Institut für Festkörperphysik der TU Berlin, Sekr.PN 6-1, Hardenbergstr.36, 1000 Berlin 12, Germany.
W. Richter
Affiliation:
Institut für Festkörperphysik der TU Berlin, Sekr.PN 6-1, Hardenbergstr.36, 1000 Berlin 12, Germany.
D.A. Woolf
Affiliation:
Physics Department, University of Wales College of Cardiff, Cardiff CF1 3TH, Wales UK.
D.I. Westwood
Affiliation:
Physics Department, University of Wales College of Cardiff, Cardiff CF1 3TH, Wales UK.
R.H. Williams
Affiliation:
Physics Department, University of Wales College of Cardiff, Cardiff CF1 3TH, Wales UK.
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Abstract

GaAs layers were deposited onto Si(100) substrates using molecular beam epitaxy (MBE). The substrates were prepared by various methods before the growth of 0.1µm thick GaAs buffer layers. Active GaAs layers were thereafter grown with thicknesses from 1 to 4µm. Infrared spectra were recorded in the spectral ranges from 12 to 65cm-4 and 50 to 500cm-1 of the thin buffer layers as well as the thick active layers. The infrared active phonon of GaAs already shows up in the spectra for the 0.1µm buffer layers. The phonon parameters were derived from a harmonic oscillator fit to the experimental data. The phonon damping constant is correlated with the bulk quality of the GaAs layers. These results are compared with those obtained from Raman and spectroscopic ellipsometry measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 493
Copyright
Copyright © Materials Research Society 1990

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References

1 see, for example, “Heterostructures on Silicon: One Step Further with Silicon” ed. Nissim, Y.I. and Rosencher, E., NATO ASI Series E: Applied Sciences-Vol.160 (Kluwer Academic Publishers, Dordrecht/Boston/London) 1989.Google Scholar
2Woolf, D.A., Westwood, D.I., and Williams, R.H., Semicond.Sci. Techn. to be published.Google Scholar
3Palik, E.D. and Holm, R.T., in “Nondestructive Evaluation of Semiconductor Materials and Devices” ed. Zemel, J.N. (Plenum Publishing Corporation) 1979.Google Scholar
4Tiong, K.K., Amirtharaj, P.M., and Pollak, F.H., Appl.Phys. Lett. 44 (1), 122 (1984).Google Scholar
5Wilhelm, H., Zahn, D.R.T., Richter, W., Woolf, D.A., Westwood, D.I., and Williams, R.H., unpublished.Google Scholar
6Rossow, U., Fieseler, T., Zahn, D.R.T., Richter, W., Woolf, D.A., Westwood, D.I., and Williams, R.H., Mat.Sci.Eng.B in print.Google Scholar