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Materials Characterization of CIGS solar cells on Top of CMOS chips

Published online by Cambridge University Press:  25 July 2011

J. Lu ,
W. Liu ,
A. Y. Kovalgin ,
Y. Sun  and
J. Schmitz
J. Lu
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, Enschede, Netherlands
W. Liu
Affiliation:
Tianjin Key Laboratory, Nankai University, Tianjin, PR China
A. Y. Kovalgin
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, Enschede, Netherlands
Y. Sun
Affiliation:
Tianjin Key Laboratory, Nankai University, Tianjin, PR China
J. Schmitz*
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, Enschede, Netherlands
*
*email: [email protected]
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Abstract

In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement error). From X-ray diffraction measurement, except two peaks from the Si <100> substrate, the diffraction peaks from CIGS solar cell CMOS chip and that on glass substrate coincide for all three temperatures. Helium ion microscope images of the cross-section and top view of the CIGS layers, shows that the grain size is suitable for high efficiency solar cells.

Keywords

photovoltaicchemical compositioncrystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1325: Symposium E – Energy Harvesting—Recent Advances in Materials, Devices and Applications , 2011 , mrss11-1325-e06-23
Copyright
Copyright © Materials Research Society 2011

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