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Material System for Packaging 500°C SiC Microsystems

Published online by Cambridge University Press:  21 March 2011

Liang-Yu Chen ,
Robert S. Okojie ,
Philip G. Neudeck ,
Gary W. Hunter  and
Shun-Tien T. Lin
Liang-Yu Chen
Affiliation:
Ohio Aerospace Institute, Cleveland, Ohio 44142
Robert S. Okojie
Affiliation:
NASA Glenn Research Center, Cleveland, Ohio 44135
Philip G. Neudeck
Affiliation:
NASA Glenn Research Center, Cleveland, Ohio 44135
Gary W. Hunter
Affiliation:
NASA Glenn Research Center, Cleveland, Ohio 44135
Shun-Tien T. Lin
Affiliation:
United Technologies Research Center, East Hartford, Connecticut 06108
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Abstract

In order to establish a material system for packaging 500°C SiC microsystems, aluminum nitride (AlN) and aluminum oxide (Al2O3) were selected as packaging substrates, and gold (Au) thick-film materials were selected as substrate metallization material for electrical interconnection system (thick-film printed wires and thick-film metallization based wire-bond) and conductive die-attach interlayer. During a 1500-hour test in atmospheric oxygen with and without electrical bias, the electrical resistance of Au thick-film based interconnection system demonstrated low and stable electrical resistance at 500°C. The electrical interconnection system was also tested in extreme dynamic thermal environment. A silicon carbide (SiC) Schottky diode was attached to ceramic substrate using Au thick-film material as the conductive bonding layer and was successfully tested at 500°C in air for more than 1000 hours. In addition to the electrical test of die-attach in static thermal environments, nonlinear finite element analysis (FEA) was used for thermal mechanical evaluation and optimization of the die-attach in a wide temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 682: Symposium N – Microelectronics and Microsystems Packaging , 2001 , N4.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Hunter, G.W., Neudeck, P.G., Fralick, G.C. et al. , SiC-Based Gas Sensors Development, Proceedings of International Conference on SiC and Related Materials. Raleigh, North Carolina, Oct. 10-15, 1999.Google Scholar
2. Neudeck, Philip G., Beheim, Glenn M., and Salupo, Carl, 600 °C Logic Gates Using Silicon Carbide JFET's, 2000 Government Microcircuit Applications Conference, March 20-23, Anaheim, CA. An earlier review article: Robert F. Davis, Galina Kelner, Michael Shur, John W. Palmour, and John Edmond, A., Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characyterization in Monocrystalline Alpha and Beta Silicon Carbide, Special Issue on Large Bandgap Electronic Materials and Components, Proceedings of the IEEE, Vol.79, 5, 1991.Google Scholar
3. Madou, Marc, Fundamentals of Microfabrication, CRC Press, 1997.Google Scholar
4. Johnson, R. Wayne, Hybrid Materials, Assembly, and Packaging in High-Temperature Electronics, Edited by Kirschman, Randall, IEEE Press, 1999.Google Scholar
5. Lewis, F. A., The Palladium-Hydrogen System, Academic Press, New York, 1967.Google Scholar
6. Goetz, G. G. and Dawson, W. M., Chromium Oxide Protection of High Temperature Conductors and Contacts, Transactions Vol. 2, Third International High Temperature Electronics Conference (HiTEC), Albuquerque, New Mexico, June 9-14, 1996.Google Scholar
7. Salmon, Jay S., Johnson, R. Wayne, and Palmer, Mike, Thick Film Hybrid Packaging Techniques for 500 °C Operation, Transactions of Fourth International High Temperature Electronics Conference (HiTEC), June 15-19, 1998, Albuquerque, New Mexico USA.Google Scholar
8. Chen, Liang-Yu, Hunter, Gary W., and Neudeck, Philip G., Thin and Thick Film Materials Based Interconnection Technology for 500 °C Operation, Transaction of First International AVS Conference on Microelectronics and Interfaces, Santa Clara, CA, Feb. 7-11, 2000.Google Scholar
9. Chen, Liang-Yu andNeudeck, Philip G., Thin and Thick Film Materials Based Chip Level Packaging for High Temperature SiC Sensors and Devices, Transaction of 5th International High Temperature Electronics Conference (HiTEC), Albuquerque, NM, USA, June 12-16, 2000.Google Scholar
10. Keusseyan, R.L., Parr, R., Speck, B.S., Crunpton, J.C., Chaplinsky, J.T., Roach, C.J., Valena, K., and Horne, G.S., New Gold Thick Film Compositions for Fine Line Printing on Various Substrate Surfaces, 1996 ISHM Symposium.Google Scholar
11. Lin, Shun-Tien, Packaging Reliability of High Temperature SiC Devices - First Half Year Report, NASA Contract Report, 2000.Google Scholar
12. Chen, Liang-Yu, Hunter, Gary W., and Neudeck, Philip G., Silicon Carbide Die Attach Scheme for 500 °C Operation, MRS 2000 Spring Meeting Proceedings-Wide-Bandgap Electronic Devices (Symposium T), San Francisco, CA, Apr. 10 - 14, 2000.Google Scholar
13. Lau, John, Wong, C. P., Price, John L., Nakayama, Wataru, Electronic Packaging – Design, Materials, Process, and Reliability, McGraw-Hill, 1998.Google Scholar
14. Hu, J.M., Pecht, M., and Dasgupta, A., Design of Reliable Die Attach, The International Journal of Microcircuits and Electronic Packaging, Volume 16, Number 1, First Quarter 1993.Google Scholar
15. Suhir, E., Die Attachment Design and Its Influence on Thermal Stresses in the Die and the Attachment. Proceedings of 37th Electronic Components Conference, 508–517, 1987.Google Scholar
16. Giacomo, Giulio Di, Reliability of Electronic Packaginges and Semiconductor Devices, McGraw-Hill, 1997.Google Scholar