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Material Prospects of Reconfigurable Transistor (RFETs) – From Silicon to Germanium Nanowires

Published online by Cambridge University Press:  27 January 2014

Jens Trommer ,
André Heinzig ,
Anett Heinrich ,
Paul Jordan ,
Matthias Grube ,
Stefan Slesazeck ,
Thomas Mikolajick  and
Walter M. Weber
Jens Trommer*
Affiliation:
Namlab gGmbH, Nӧthnitzer Strasse 64, 01187 Dresden, Germany. Center for Advancing Electronics Dresden (‘CfAED’), TU Dresden, 01062 Dresden, Germany.
André Heinzig
Affiliation:
Center for Advancing Electronics Dresden (‘CfAED’), TU Dresden, 01062 Dresden, Germany. Institute of Semiconductors and Microsystems, TU Dresden, Nöthnitzer Strasse 64, 01187 Dresden, Germany.
Anett Heinrich
Affiliation:
Namlab gGmbH, Nӧthnitzer Strasse 64, 01187 Dresden, Germany.
Paul Jordan
Affiliation:
Namlab gGmbH, Nӧthnitzer Strasse 64, 01187 Dresden, Germany.
Matthias Grube
Affiliation:
Namlab gGmbH, Nӧthnitzer Strasse 64, 01187 Dresden, Germany.
Stefan Slesazeck
Affiliation:
Namlab gGmbH, Nӧthnitzer Strasse 64, 01187 Dresden, Germany.
Thomas Mikolajick
Affiliation:
Namlab gGmbH, Nӧthnitzer Strasse 64, 01187 Dresden, Germany. Center for Advancing Electronics Dresden (‘CfAED’), TU Dresden, 01062 Dresden, Germany. Institute of Semiconductors and Microsystems, TU Dresden, Nöthnitzer Strasse 64, 01187 Dresden, Germany.
Walter M. Weber
Affiliation:
Namlab gGmbH, Nӧthnitzer Strasse 64, 01187 Dresden, Germany. Center for Advancing Electronics Dresden (‘CfAED’), TU Dresden, 01062 Dresden, Germany.
*
*Email: [email protected]
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Abstract

Reconfigurable nanowire transistors provide the operation of unipolar p-type and n-type FETs freely selectable within a single device. The enhanced functionality is enabled by controlling the currents through two individually gated Schottky junctions. Here we analyze the impact of the Schottky barrier height on the symmetry of Silicon nanowire RFET transfer characteristics and their performance within circuits. Prospective simulations are carried out, indicating that germanium nanowire based RFETs of the same dimensions will show a distinctly increased performance, making them a promising material solution for future reconfigurable electronics.

Keywords

electrical propertiesGeSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1659: Symposium SS/XX – Micro- and Nanoscale Systems – Novel Materials, Structures and Devices , 2014 , pp. 225 - 230
Copyright
Copyright © Materials Research Society 2014 

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References

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