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Material Characterization of Low-Temperature Silicon Epitaxial Growth on Patterned Oxidized Wafers by ULPCVD From SiH4/SiF4/H2

Published online by Cambridge University Press:  25 February 2011

Tri-Rung Yew  and
Rafael Reif Reif
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing–Hua University, Hsinchu, Taiwan, ROC
Rafael Reif Reif
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Massachusetts, USA
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Abstract

Low temperature silicon selective epitaxial growth on patterned oxidized wafers is becoming crucial to ultra large scale integration (ULSI) technologies. Low temperature processes can reduce dopant redistribution via solid state diffusion so that a sharp transition region can be obtained. This paper presents material characterization of epitaxial films grown on patterned oxidized wafers by ultralow pressure chemical vapor deposition (ULPCVD) from SiH4/SiF4/H2 (≤ 10 mTorr), in which SiF4 was used to explore its capability for selective epitaxial growth. The deposition temperature is 800°C. The effects of the SiF4 addition to SiH4/H2 are discussed. Defects in epitaxial layers resulting from a high composition of the SiF4 during deposition were characterized. Results of in–situ surface cleaning using a SiF4/H2 plasma are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 389
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Borland, J.O. and Drowley, C.I., Solid State Technol., 8, 141 (1985)Google Scholar
2. Tanno, K., Endo, N., Kitajima, H., Kurogi, Y., and Tsuya, H., Jpn., J. Appl. Phys., 21 L564 (1982)Google Scholar
3. Borland, J.O. and Beinglass, I., Solid State Technol., 1, 73 (1990)Google Scholar
4. Regolini, J.L., Bensahel, D., Scheid, E., and Mercier, J., Appl. Phys. Lett., 54, 658 (1989)Google Scholar
5. Yew, T.R. and Reif, R., J. Appl. Phys., 65, 2500 (1989)Google Scholar
6. Yew, T.R. and Reif, R., Appl. Phys. Lett., 55, 1014 (1989)Google Scholar
7. Murota, J., Nakamura, N., Kato, M., Mikoshiba, N., and Ohmi, T., Appl. Phys. Lett., 54, 1007 (1989)Google Scholar
8. Comfort, J.H., Garverick, L.M., and Reif, R., J. Appl. Phys., 62, 3388 (1987)Google Scholar