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Mass Transport Effects In Selectively Deposited Diamond Thin Films

Published online by Cambridge University Press:  10 February 2011

Michael C. Kwan  and
Karen K. Gleason
Michael C. Kwan
Affiliation:
Massachusetts Institute of Technology, Department of Chemical Engineering, 66-468, Cambridge, MA, 02139
Karen K. Gleason
Affiliation:
Massachusetts Institute of Technology, Department of Chemical Engineering, 66-468, Cambridge, MA, 02139
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Abstract

In order to study the effects of gas phase transport on the growth of hot-filament chemical vapor deposited (HFCVD) diamond, crystallites were selectively grown on a pre-nucleated, oxygen plasma patterned silicon wafer. Growth rate differences across the substrate were observed from scanning electron micrographs. The deposition system was then modeled with a three dimensional finite difference scheme that employed gas phase diffusion of a single growth limiting species from the hot filament to the surface coupled with a first order surface reaction. The variations in the predicted gas phase concentration directly above the surface were adjusted to match the observed growth rate differences through the Dahmk6hler number which was then used to calculate a first order surface reaction coefficient. This value was compared to published reaction coefficients for the abstraction of a surface H-atom by a gas-phase H-atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 25
Copyright
Copyright © Materials Research Society 1996

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References

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