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Magneto-Optical Study of Negative Persistent Photo-Effect in InAs/Alo.5Ga0.5Sb Quantum Wells

Published online by Cambridge University Press:  21 February 2011

J.-P. Cheng ,
Ikai Lo  and
W.C. Mitchel
J.-P. Cheng
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Ikai Lo
Affiliation:
WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433-6533 Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
W.C. Mitchel
Affiliation:
WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433-6533
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Abstract

Cyclotron resonance (CR) of electrons confined in an InAsZAlo.5Gao.5Sb quantum well has been used to investigate the negative persistent photo-effect (NPP) at low temperatures. After an in situ cross-gap light illumination, the electron density is reduced 28%, and the CR effective mass decreases from (0.0342±0.0002)mo to (0.0322±0.0002)mo. The response time of the NPP build-up transient has been studied via the photon-dose technique, and it is on the order of 10 msec with an illumination power flux of ~ 10mW/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 437
Copyright
Copyright © Materials Research Society 1994

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