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Magnetic Properties of Co/Pt Multilayers on MgO (100) Substrates

Published online by Cambridge University Press:  15 February 2011

R. Krishnan ,
H. Lassri ,
M. Porte ,
M. Tessier  and
N. K. Flevaris
R. Krishnan
Affiliation:
Laboratoire de Magnétisme et Matériaux Magnétiques, C.N.R.S. 92195 Meudon, France
H. Lassri
Affiliation:
Laboratoire de Magnétisme et Matériaux Magnétiques, C.N.R.S. 92195 Meudon, France
M. Porte
Affiliation:
Laboratoire de Magnétisme et Matériaux Magnétiques, C.N.R.S. 92195 Meudon, France
M. Tessier
Affiliation:
Laboratoire de Magnétisme et Matériaux Magnétiques, C.N.R.S. 92195 Meudon, France
N. K. Flevaris
Affiliation:
Department of Solid State Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece
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Abstract

We have prepared Co/Pt multilayers by evaporation in UHV on MgO (100) substrates kept at various temperatures. Most of the samples were grown on a Pt buffer layer. Magnetic and magneto-optical properties have been studied. The surface anisotropy Ks for MgO substrates is 0.35 erg.cm−2 which is smaller than 0.6 erg.cm−2 obtained for glass substrates. The effect of the growth conditions on Ks is observed only for t(Co)<10 Å where the crossover to Keff>O occurs. Deposition at higher temperature leads to an increase in the coercivity. The magnetization and the anisotropy is practically temperature independent in the range 5 to 295 K. However the coercivity increases sharply below 100K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 232: Symposium T – Magnetic Materials: Microstructure and Properties , 1991 , 91
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[l]. Carcia, P.F., Meinhaldt, A.D., and Suna, A., AppI. Phys. Lett. 47 178 (1985)Google Scholar
[2]. Zeper, W.B., Greidanus, F.J.A., Carcia, P.F., and Fincher, P.R., J. Appil. Phys. 65 4971 (1989)CrossRefGoogle Scholar
[3]. Ochiai, Y., Ilashimoto, S., and Aso, K., Jap. J. Appl. Phys., 28 L 659 (1989)CrossRefGoogle Scholar
[4]. Broeder, F.J.A. den, Kuiper, D., Donkersloot, H.C., and Hoving, W., Appl. Physics. A 49 507 (1989)CrossRefGoogle Scholar
[5]. Lacey, E.T.M., and Grundy, P.J., IEEE Trans. Mag. 26 2356 1991 Google Scholar
[6]. Krishnan, R., Porte, M., and Tessier, M., IEEE Trans. Mag. 26 2727 (1989)CrossRefGoogle Scholar
[7]. Awano, H., Suzuki, Y., Yamazaki, T., and Itoh, A., IEEE Trans. Mag. MAG 26 2742 (1990)CrossRefGoogle Scholar
[8]. Jin, B. Y. and.Ketterson, J.B., Adv. in Phys. 38 189 (1989)Google Scholar
[9]. Hashimoto, S., Ochiai, Y., and Aso, K., J. Appl. Phys. 66 4909 (1989)Google Scholar
[10]. Lee, C.H., Farrow, R.F.C., Lin, C.J., and Marinaro, E.E., Phys. Rev. B 42 11384 (1990)Google Scholar