Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T16:33:31.130Z Has data issue: false hasContentIssue false

Magnetic Domain Structures in CoNiFe Thin Films and Lines

Published online by Cambridge University Press:  11 February 2011

Lucas Pérez
Affiliation:
Dpto. Física de Materiales, Universidad Complutense de Madrid, Ciudad Universitaria s/n Madrid, 28040, Spain.
Oscar de Abril
Affiliation:
Dpto. Física de Materiales, Universidad Complutense de Madrid, Ciudad Universitaria s/n Madrid, 28040, Spain.
Claudio Aroca
Affiliation:
ISOM and Dpto. Física Aplicada. ETSI Telecomunicación. Universidad Politécnica Madrid, 28040, Spain.
Pedro Sánchez
Affiliation:
ISOM and Dpto. Física Aplicada. ETSI Telecomunicación. Universidad Politécnica Madrid, 28040, Spain.
Eloísa López
Affiliation:
Dpto. Física de Materiales, Universidad Complutense de Madrid, Ciudad Universitaria s/n Madrid, 28040, Spain.
M.C. Sánchez-Trujillo
Affiliation:
Dpto. Física de Materiales, Universidad Complutense de Madrid, Ciudad Universitaria s/n Madrid, 28040, Spain.
Get access

Abstract

Thin films and arrays of lines of magnetic CoNiFe alloy have been produced by electrodeposition. A magnetic field was applied during the electrodeposition process in order to induce a magnetic anisotropy in the sample. The dependence of the magnetic properties and the magnetic domain structures on the thickness of the films is reported. In addition to this, the magnetic properties and the domain structure of a thin film and an array of lines, with the same thickness and deposited in the same conditions, have been compared. An increase in the coercivity of the array of lines has been shown.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Andriacos, P.C. and Robertson, N., IBM J. Res. Develop. 42, 671 (1998).Google Scholar
Osaka, T., et al., Nature 392, 796 (1998).Google Scholar
3. Ohashi, K., et al., IEEE Trans. Mag. 34, 1462 (1998).Google Scholar
4. Tabakovic, I., Inturi, V., Riemer, S., J. Electrochem. Soc. 149 (1), C18 (2002).Google Scholar
5. Liu, X. and Zangari, G., J. Appl. Phys. 90 (10), 5247 (2001).Google Scholar
6. Perez, L., Attenborough, K., De Boeck, J., Celis, J.P., Aroca, C., Sánchez, P., López, E., Sánchez, M.C., J. Magn. Magn. Mater. 242–245, 163 (2002).Google Scholar
7. Liu, X., Zangari, G., Shen, L., J. Appl. Phys. 87, 5410 (2000).Google Scholar