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Magnetic and Optical Properties of Eu-doped GaN

Published online by Cambridge University Press:  01 February 2011

Jennifer Hite ,
G T Thaler ,
J H Park ,
A J Steckl ,
C R Abernathy ,
J M Zavada  and
Stephen Pearton
Jennifer Hite
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, PO Box 116400,100 Rhines Hall, Gainesville, FL, 32611, United States
G T Thaler
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, Gainesville, FL, 32611, United States
J H Park
Affiliation:
[email protected], University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, OH, 45221, United States
A J Steckl
Affiliation:
[email protected], University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, OH, 45221, United States
C R Abernathy
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, Gainesville, FL, 32611, United States
J M Zavada
Affiliation:
[email protected], US Army Research Office, Electronics Division, Research Triangle Park, NC, 27709, United States
Stephen Pearton
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, PO Box 116400,100 Rhines Hall, Gainesville, FL, 32611, United States
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Abstract

GaN films were doped with Eu to a concentration of ∼0.12 at. % during growth at 800°C by molecular beam epitaxy, with the Eu cell temperature held constant at 470°C. All samples were post-annealed at 675°C. The films exhibited strong photoluminescence (PL) in the red (622 nm) whose absolute intensity was a function of the Ga flux during growth, which ranged from 3-5.4×10−7 Torr. The maximum PL intensity was obtained at a Ga flux of 3.6×10−7 Torr. The samples showed room temperature ferromagnetism with saturation magnetization of ∼0.1-0.45 emu/cm3, consistent with past reports where the Eu was found to be predominantly occupying substitutional Ga sites. There was an inverse correlation between the PL intensity and the saturation magnetization in the films. X-ray diffraction showed the presence of EuGa phases under all of our growth conditions but these cannot account for the observed magnetic properties.

Keywords

secondary ion mass spectroscopy (SIMS)Euannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-01
Copyright
Copyright © Materials Research Society 2007

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References

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