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Luminescent Hydrogenated Nanocrystalline Silicon Films

Published online by Cambridge University Press:  28 February 2011

Y. Wang ,
F. Yun ,
X. B. Liao ,
G. Q. Pan ,
G.L. Kong  and
B. Yang
Y. Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, 100083 Beijing, P.R. China
F. Yun
Affiliation:
Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, P.O. Box 80, 710068 Xian, P.KChina
X. B. Liao
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, 100083 Beijing, P.R. China
G. Q. Pan
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, 100083 Beijing, P.R. China
G.L. Kong
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, 100083 Beijing, P.R. China
B. Yang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, 100083 Beijing, P.R. China
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Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) films with room temperature luminescence have been prepared in a PECVD system. Heavily H2 diluted silane and large negative bias accompanying low deposition temperature are used to decrease the crystalline size. The films comprise nanocrystallites surrounded by an interfacial phase with wurtzite structure characterized by 495cm−1 feature in the Raman spectrum. The X-ray diffraction spectrum shows the average grain size is about 4-5nm. The room temperature photoluminescence (PL) spectrum consists of two peaks, one at 2.21eV which may be induced by the transitions of the quantum subbands in the nanocrystalline phase, the other at 2.84eV which may be attributed to some kinds of localized centers in the interfacial phase. The photoluminescence excitation (PLE) spectrum also shows two peaks, a low one at 3.4eV approaching the bulk like transitions between Г25'V-Г15c while the high energy envelope around 5.0eV has a complicated configuration, and might be related to both the bulk like transition between Λ3v-Λ3cand band transitions of (Si-H2)n chains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 769
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Wolford, D. J., Scott, B. A., Reimer, J. A. and Bradley, J. B., Physica 117B&118B (1983) 920 Google Scholar
2 Kozlowski, F., Petrova-Koch, V., Kux, A., Stadler, W., Fleischmann, A. and Sigmund, H.., J. Non-Cryst. Solids 137&138 (1991) 91 Google Scholar
3 Canham, L. T., Appl. Phys. Lett. 57 (1990) 1046 Google Scholar
4 Richter, H. and Ley, L., J. De Phys. C4 (1981) 261 Google Scholar
5 Klug, H. P. and Alexander, L. E., X-Ray Diffraction Procedures, John Wiley & Sons, New York 1974 Google Scholar
6 Konuma, M., Curtins, H., Sarott, F. A. and Veprek, S., Phil. Mag. B, 1987, Vol.55, No.3, pp377–389 Google Scholar
7 Ueno, Tomo, Akiba, Yuichi, Shinohara, Toshiro, Koyama, Hidelki, Koshida, Nobuyoshi and Tarui, Yasuo, Jpn. J. Appl. Phys. Vol.32(1993)pp.L5–L–7 Google Scholar