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Luminescence Study of The INTRA-4f Emissions from GaAs:(Er+O) and AlxGal1−xAs:(Er+O)

Published online by Cambridge University Press:  21 February 2011

Jose E. Colon ,
David W. Elsaesser ,
Yung Kee Yeo ,
Robert L. Hengehold  and
Gernot S. Pomrenke
Jose E. Colon
Affiliation:
Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433
David W. Elsaesser
Affiliation:
Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433
Yung Kee Yeo
Affiliation:
Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433
Robert L. Hengehold
Affiliation:
Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433
Gernot S. Pomrenke
Affiliation:
Air Force Office of Scientific Research, Boiling Air Force Base, Washington, D.C. 20332
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Abstract

A systematic photoluminescence study of erbium and oxygen co-implantation into GaAs and AlxGal1−xAs with × = 0.1, 0.2, 0.3, and 0.4 was carried out. The addition of oxygen greatly enhanced the Er emission intensity from AlxGal1−xAs:Er while the O and Er co-doping into GaAs rather made the Er emission intensity decrease from that of the GaAs:Er. The Er emission intensity from AlxGal1−xAs:(Er+O) generally increases with increasing Al mole fraction and O dose up to 1 × 10 15/cm2, but it does not depend much on the substrate conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 169
Copyright
Copyright © Materials Research Society 1993

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References

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