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Luminescence properties of amorphous AlN thin film phosphors incorporated with mixtures of Tb, Cu or Cu, Cr
Published online by Cambridge University Press: 17 March 2011
Abstract
Amorphous thin films of AlN doped with Cu (blue luminescence), Tb (green luminescence) and Cr (red luminescence) were deposited on p-doped Si (111) substrates using RF magnetron sputtering in a nitrogen atmosphere and made luminescent active by heat treatment at 1000°C. Single layered amorphous AlN films deposited with Tb and Cu showed cathodoluminescence from only the Tb3+ ions. Presumably, energy is transferred from Cu luminescence centers to Tb centers in close proximity. In contrast to this, double layered amorphous AlN films doped with Cu (∼200 nm) on top of Tb (∼50 nm) emits from both ions. This behavior is observed in a double layered amorphous AlN film doped with Cu (∼200 nm) on top of a Cr (∼200 nm) doped film. Secondary-ion mass spectrometry depth profiling revealed that the incorporated metals moved from one layer into the other during the heat treatment step necessary for luminescence activation.
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- Copyright © Materials Research Society 2001