Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-27T02:48:45.139Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence Decay of the 1.54 μm Emission from Erbium in Silicon

Published online by Cambridge University Press:  10 February 2011

J. Hartung ,
J. H. Evans ,
P. Dawson ,
A. P. Sciioles ,
T. Taskin ,
M. Q. Huda ,
C. Jeynes  and
A. R. Peaker
J. Hartung
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, [email protected]
J. H. Evans
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, [email protected]
P. Dawson
Affiliation:
Centre for Electronic Materials and Department of Physics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M60 1QD, UK
A. P. Sciioles
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, [email protected]
T. Taskin
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, [email protected]
M. Q. Huda
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, [email protected]
C. Jeynes
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK
A. R. Peaker
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, [email protected]
Get access

Abstract

Photoluminescence of silicon implanted with erbium and oxygen was measured in the time domain focussing on the temperature and excitation density dependence of the intra-4f-shell emission from Er3+. The decay of this luminescence is similar for the different optically active crystal field split Er-centres. At low temperatures the luminescence transients consist of a fast initial non-exponential component followed by slower exponential behaviour. An increase in excitation density results in a higher proportion of the luminescence decaying with the faster decay time. Our results indicate a relation of the fast component to nonradiative processes. Auger recombination is proposed as a possible mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 119
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ennen, H., Schneider, J., Pomrenke, C. and Axmann, A., Appl. Phys. Lett. 43, 943 (1983)Google Scholar
[2] Zheng, B., Michel, J., Ren, F. Y. C., Kimerling, L. C., Jacobson, D. C. and Poate, J. M., Appl. Phys. Lett. 64, 2842 (1994)Google Scholar
[3] Franzb, G., Priolo, F., Coffa, S., Polman, A. and Carnera, A., Appl. Phys. Lett. 64, 2235 (1994)Google Scholar
[4] Taskin, T., Huda, M. Q., Scholes, A., Evans, J. H., Peaker, A. R., Hemment, P., Jeynes, C. and Jafri, Z. in Thin Films for Integrated Optics Applications, edited by Wessels, B.W., Marder, S.R. and Walba, D.M. (Mat. Res. Soc. Symp. Proc. Vol.392, Pittsburgh, PA 1995), p. 223 Google Scholar
[5] Przybylinska, H., Hendorfer, G., Bruckner, M., Palmetshofer, L. and Jantsch, W., Appl. Phys. Lett. 66, 490 (1995)Google Scholar
[6] Langer, J. M. and Hong, L. V., J. Phys. C:Solid State Physics 17, L923 (1984)Google Scholar
[7] K~rber, W. and Hangleiter, A., Appl. Phys. Lett. 52, 114 (1988)Google Scholar
[8] Thonke, K., Pressel, K., Bohnert, G., Stapor, A., Weber, J., Moser, M., Molassioti, A, Hangleiter, A. and Scholz, F., Semicond. Sci. Technol. 5, 1124 (1990)Google Scholar
[9] Coffa, S., Franzò, G., Priolo, F., Polman, A. and Serna, R., Phys. Rev. B 49, 16313 (1994)Google Scholar
[10] Gu, S.Q., Ramachandran, S., Reuter, E.E., Turnbull, D.A., Verdeyen, J. T. and Bishop, S. G., Appl. Phys. Lett. 66, 670 (1995)Google Scholar
[11] Haug, R., Phys. Status Solidi B 108, 443 (1981)Google Scholar