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Luminescence Activation of Porous Silicon by Post-Anodization Treatment

Published online by Cambridge University Press:  28 February 2011

A. Kux ,
F. Muller  and
F. Koch
A. Kux
Affiliation:
Physik-Department E16, Tech. Univ. München, 8046 Garching, Germany
F. Muller
Affiliation:
Physik-Department E16, Tech. Univ. München, 8046 Garching, Germany
F. Koch
Affiliation:
Physik-Department E16, Tech. Univ. München, 8046 Garching, Germany
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Abstract

We prepare “nonluminescing” porous Si by electrochemical etching (50 mA/cm2 in 50% HF diluted 1:1 with ethanol) of 1 Ω(100) p-type wafers in the absence of light in order to study the subsequent luminescence activation by postprocessing. The treatments are: photochemical etching, ageing under ambient conditions, thermal oxidation. The study reveals remarkable inhomogeneities in the depth distribution of the luminescence and allows us to comment on the relative importance of particle size, spin density and chemical composition for the luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 311
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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