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Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates

Published online by Cambridge University Press:  28 February 2011

T. Eshita ,
T. Suzuki ,
T. Hara ,
F. Mieno ,
Y. Furumura ,
M. Maeda ,
T. Sugii  and
T. Ito
T. Eshita
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Suzuki
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Hara
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
F. Mieno
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
Y. Furumura
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
M. Maeda
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Sugii
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi 243-01, Japan
T. Ito
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi 243-01, Japan
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Abstract

We developed a heteroepitaxial growth technique for large-area β-SiC films on Si substrates without buffer layers at 850ºC and 1000ºC. The substrates were vicinal 4-inch (111) Si wafers. The β-SiC films had smooth surfaces and were crack-free. X-ray diffraction and electron diffraction analysis revealed that the films grown at 1000ºC were single crystals. Satisfactory characteristics were obtained in aMOSFET with a β-SiC/Si02/poly-Si substrate structure. Our evaluations indicate that the β-SiC films were high-quality crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 357
Copyright
Copyright © Materials Research Society 1988

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References

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