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Low-Resistivity Non-Alloyed Ohmic Contacts to p- and n-Gaas Using In-Situ Integrated Process

Published online by Cambridge University Press:  25 February 2011

M. Hong ,
D. Vakhshoori ,
J. P. Mannaerts  and
J. Kwo
M. Hong
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. Vakhshoori
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. P. Mannaerts
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. Kwo
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Very low-resistivity non-alloyed ohmic contacts (Rc) to both p- and n-GaAs were realized using molecular beam epitaxy (MBE) in a vacuum integrated system. Three different metals of Au, Ag, and Nb were in-situ deposited on (1) p+-GaAs which was heavily Be-doped either in a uniform doping or with a 5-doping scheme; and (2) n+-GaAs which was doped in a 5-pair Si δ-doping with a spacer GaAs-Si 2.5 nm thick. In both cases, low Rc values of ≤ (1-5) x 10-7 Ω-cm2 were achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 287
Copyright
Copyright © Materials Research Society 1994

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References

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