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Low-noise, Low-dark-current GaN Diodes for UV Detectors

Published online by Cambridge University Press:  17 March 2011

Peter W. Deelman ,
Robert N. Bicknell-Tassius ,
Sergey Nikishin  and
Henryk Temkin
Peter W. Deelman
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
Robert N. Bicknell-Tassius
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
Sergey Nikishin
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
Henryk Temkin
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
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Abstract

We report mesa-isolated Schottky barrier photodetectors fabricated on n-GaN. Single-element detectors were constructed from nitride epilayers grown by gas source molecular beam epitaxy (GSMBE) on Si(111). Chlorine-based reactive ion etching was used to form two-level mesas. The detectors were front-illuminated through 100 Å Pd semitransparent Schottky contacts on the upper mesas; ohmic contact on the lower mesas was made using standard Ti/Al/Ti/Au metallurgy. Silicon dioxide grown by plasma-enhanced chemical vapor deposition provided both surface passivation and electrical isolation. The dark current of an 86 × 86 µm2 single-element detector is 2.10 × 10−8 A/cm2 at –2 V bias, and the zero-bias noise power density at 1Hz is as low as 9 × 10−29 A2/Hz. In addition, we present preliminary results for p-n diodes fabricated from epilayers grown on sapphire. The dark current of a 50 × 50 µm2 single-element detector is 1.6 × 10−6 A/cm2 at –2 V bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.27
Copyright
Copyright © Materials Research Society 2001

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References

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