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Low Thermal Budget Techniques For Controlling Stress In Si1-XGeX Deposited At 210°C

Published online by Cambridge University Press:  01 February 2011

Sherif Sedky ,
Omar Mortagy  and
Ann Witvrouw
Sherif Sedky
Affiliation:
[email protected], The AMerican Univeristy in Cairo, Physics, 113 Kars EL Eini Street, Cairo, N/A, 11511, Egypt, + 20 10 199 64 89, + 202 795 7565
Omar Mortagy
Affiliation:
[email protected], The American University in Cairo, The Sceince and Technology Research Center, 113 Kasr El Eini Street, Cairo, N/A, 11511, Egypt
Ann Witvrouw
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, N/A, B3001, Belgium
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Abstract

This work reports, for the first time, on the possibility of realizing surface micromachined silicon germanium structures at 210°C, which have extremely low strain gradient (μm-1). This extremely low strain gradient is obtained by tuning the physical properties of Si1-xGex, locally, without affecting the underlying layers, by excimer laser annealing. Tuning the laser annealing condition to optimize the physical properties of PECVD Si1-xGex is challenging, especially for films deposited at low temperatures (~ 250°C or lower) due to the high hydrogen content and the poor adhesion of these films. Furthermore, optimizing some properties might be at the cost of others. To clarify this issue, it is interesting to note that reducing the electrical resistivity implies using high laser pulse fluence. This however will increase mean stress, strain gradient and surface roughness as will be shown in this work.

Keywords

microelectro-mechanical (MEMS)plasma-enhanced CVD (PECVD) (chemical reaction)laser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A21-14
Copyright
Copyright © Materials Research Society 2006

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References

[1] Sedky, S., Post-Processing Techniques for Integrated MEMS, Boston, Artech house, 2006.Google Scholar
[2] Sedky, S., Fiorini, P., Baert, K., Hermans, L. and Mertens, R., “Characterization and Optimization of Infra Red Poly SiGe Bolometers”, IEEE transactions on Electron Devices, 46(4), 675–682, April 1999.Google Scholar
[3] Fang, D. and Xie, H., “A low-power low-noise capacitive sensing amplifier for integrated CMOS-MEMS inertial sensors”, Proceedings of the IASTED International Conference on Circuits, Signals, and Systems, 2004, pp. 96–101.Google Scholar
[4] Aigner, R., “MEMS in RF-filter applications: Thin film bulk-acoustic-wave technology”, 13th International Conference on Solid-State Sensors and Actuators and Microsystems, 2005, p 5–8.Google Scholar
[5] Tsai, C., Cheng, P., and Tseng, Y., “Design and fabrication of micro mirror for MOEMS devices by CMOSMEMS common process”, Proceedings of SPIE, v 5717, 2005, p 89–98.Google Scholar
[6] Sedky, S., Gromova, M., Donck, T. Van der, Celis, J. and Witvrouw, A., “Characterization of KrF Excimer Laser Annealed PECVD SixGe1-x for MEMS Post-Processing”, Sensors and Actuators A: Physical, Vol. 127, No. 2, pp. 316–323, March 2006.Google Scholar
[7] Sedky, S., Howe, R. and King, T. J., “Pulsed Laser Annealing, a Low Thermal Budget Technique for Eliminating Stress Gradient in Poly-SiGe MEMS Structures”, Journal of MicroElectroMechanical Systems, Vol. 13, No. 4, 2004, pp. 669–675.Google Scholar