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Low Thermal Budget NiSi Films on SiGe Alloys

Published online by Cambridge University Press:  11 February 2011

S. K. Ray ,
T. N. Adam ,
G. S. Kar ,
C. P. Swann  and
J. Kolodzey
S. K. Ray
Affiliation:
Department of Physics, IIT Kharagpur 721 302, India
T. N. Adam
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
G. S. Kar
Affiliation:
Department of Physics, IIT Kharagpur 721 302, India
C. P. Swann
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
J. Kolodzey
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
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Abstract

Nickel silicides were formed on Si (100) substrates and CVD grown Si0.9Ge0.1/Si layers by low thermal budget annealing of evaporated Ni films to evaluate their utility for ultra shallow junctions. The phase formation and microstructure of silicides formed using conventional furnace and rapid thermal annealing were studied by x-ray diffraction, Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy. RBS simulations and XPS study revealed the formation of a ternary nickel germanosilicide phase for the SiGe alloy. The incorporation of Ge resulted in a higher temperature window for the stability of low-resistive monosilicide phase. Electrical properties of the grown silicides were characterized by four-probe resistivity and contact resistance measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N6.6
Copyright
Copyright © Materials Research Society 2003

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References

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