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Low Temperature Selective Si Epitaxy Using Si2H6 and Cl2: Investigations into Selectivity Robustness and Epitaxial Film Quality

Published online by Cambridge University Press:  10 February 2011

Patricia A. O'Neil ,
Katherine E. Violette ,
Mehmet C. Öztürk ,
Dale Batchelor  and
Dennis M. Maher
Patricia A. O'Neil
Affiliation:
North Carolina State University, Department of Electrical Engineering, Box 7911, Raleigh, NC 27695-7911, USA
Katherine E. Violette
Affiliation:
North Carolina State University, Department of Electrical Engineering, Box 7911, Raleigh, NC 27695-7911, USA Texas Instruments, P.O. Box 655012, MS 944, Dallas, TX, 75265
Mehmet C. Öztürk
Affiliation:
North Carolina State University, Department of Electrical Engineering, Box 7911, Raleigh, NC 27695-7911, USA
Dale Batchelor
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7916, Raleigh, NC 27695-7916, USA
Dennis M. Maher
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7916, Raleigh, NC 27695-7916, USA
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Abstract

In this paper, we explore selective Si epitaxy by UltraHigh Vacuum Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD) using Si2H6, H2, and C12 with particular emphasis on selectivity robustness. Two key parameters considered in this study were partial pressures of Si2H6 and H2. It was found that excessive increases in either partial pressure could lead to selectivity degradation. The two mechanisms by which the observed selectivity degradation can be explained are as follows: A higher Si2H6 partial pressure provides a larger flux of Si atoms which directly influences the probability of reaching the critical nuclei size for stable nuclei formation while an increase in H2 partial pressure reduces the desorption rate of Si adatoms from the insulator surface by reducing the available Cl in the gas phase for SiC12 formation. The impact of process parameters on epitaxial defect density was also evaluated using darkfield imaging. The results clearly indicate increasing defect density upon increases in both the chlorine flow rate and the level of contamination introduced through the silicon source gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 355
Copyright
Copyright © Materials Research Society 1996

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