Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-28T07:29:57.526Z Has data issue: false hasContentIssue false
  • English
  • Français

Low temperature route for synthesis of cadmium selenide quantum dots and their application in fabricating a QD-LED

Published online by Cambridge University Press:  25 February 2014

Menaka Jha ,
Michael McCreary ,
Sreeram Vaddiraju  and
Delaina A. Amos
Menaka Jha
Affiliation:
Conn Center for Renewable Energy Research, J.B. Speed School of Engineering, University of Louisville, USA
Michael McCreary
Affiliation:
Department of Chemical Engineering, J.B. Speed School of Engineering, University of Louisville, USA
Sreeram Vaddiraju
Affiliation:
Department of Chemical Engineering, Texas A&M University, USA
Delaina A. Amos*
Affiliation:
Department of Chemical Engineering, J.B. Speed School of Engineering, University of Louisville, USA
*
*Email: [email protected]
Get access

Abstract

The present study describes the effect of ageing time during the synthesis of oleic acid capped cadmium selenide quantum dots synthesized by the hot injection route and their use in the fabrication of a hybrid quantum dot light emitting device (QD-LED). This hot injection process has been carried out at the lower synthesis temperature of 140°C compared to the conventional temperature of ∼300°C. Fluorescent monodisperse quantum dots of size 3-5 nm and 8-10 nm have been obtained at an ageing time of 2 and 3 hours respectively. An attempt to fabricate a QD-LED has been carried out. Current versus voltage studies show a turn on voltage at 3.06 V with a current of ∼ 87 nA.

Keywords

chemical synthesisluminescenceoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1630: Symposium O – Solution Processing of Inorganic and Hybrid Materials for Electronics and Photonics , 2014 , mrsf13-1630-o04-09
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Zorman, B., Ramakrishna, M. V. and Friesner, R. A., J Phys. Chem. 99, 7649 (1995)10.1021/j100019a052CrossRefGoogle Scholar
Talapin, D. V., Lee, J.S., Kovalenko, M. V. and Shevchenko, E. V., Chem. Rev. 110, 389( 2009).10.1021/cr900137kCrossRefGoogle Scholar
Pickering, S., Kshirsagar, A., Ruzyllo, J. and J..Xu, Opto-Electron. Rev. 20, 148 (2012).10.2478/s11772-012-0019-9CrossRefGoogle Scholar
Chaudhary, S., Ozkan, M. and Chan, W. C. W., Appl. Phys Letts, 84, 2925 ( 2004).10.1063/1.1699476CrossRefGoogle Scholar
Kang, B. H., Seo, J.S., Jeong, S., Lee, J., Han, C.S., Kim, D.E., Kim, K.J., Yeom, S.H., Kwon, D.H., Kim, H. R. and Kang, S.W., Opt. Express, 18, 18303 (2010).10.1364/OE.18.018303CrossRefGoogle Scholar
Reiss, P., Protiere, M. and Li, L., Small,5, 154 (2009).10.1002/smll.200800841CrossRefGoogle Scholar
Lee, S. W., Oh, D. C., Goto, H., Ha, J. S., Lee, H. J., Hanada, T., Cho, M. W., and Yao, T., Appl. Phys letts, 89, 132117 (2006).10.1063/1.2357930CrossRefGoogle Scholar