Hostname: page-component-6bf8c574d5-685pp Total loading time: 0 Render date: 2025-03-07T13:11:04.464Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Film Growth by Supersonic Jets of CBr4

Published online by Cambridge University Press:  21 February 2011

Douglas A. A. Ohlberg ,
Garry Rose ,
James Ren  and
R. Stanley Williams
Douglas A. A. Ohlberg
Affiliation:
Department of Chemistry and Biochemistry, University of California Los angeles, Los angeles, CA 90024-1569
Garry Rose
Affiliation:
Department of Chemistry and Biochemistry, University of California Los angeles, Los angeles, CA 90024-1569
James Ren
Affiliation:
Department of Chemistry and Biochemistry, University of California Los angeles, Los angeles, CA 90024-1569
R. Stanley Williams
Affiliation:
Department of Chemistry and Biochemistry, University of California Los angeles, Los angeles, CA 90024-1569
Get access

Abstract

Pulsed, supersonic jets of CBr4 seeded in a hydrogen bath gas have been used to deposit films on silicon at low temperatures (c A. 100° C) in a high vacuum chamber. IN situ analysis of the films using x-ray photoelectron spectroscopy (XPS) and depth profiling indicate a surface composition of 34% Br and 66 % C and a bulk composition of 88% C and 12% Br. the deposition efficiency of CBr4 was found to drop dramatically when seeded in bath gases of deuterium, helium, and argon, suggesting that the film growth is an activated process, requiring precursor energies of at least 3.6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 233
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yoder, Max N., Thin Solid Films 225, 145 (1993).Google Scholar
2 Sprang, H., Busmann, H., Lauer, S., and Hertel, I.V., Appl. Phys. a 55, 347 (1992).Google Scholar
3 Connolly, M. S., Greene, E. F., Gupta, C., Marzuk, P., Morton, T.H., Parks, C., and Staker, G., J. Phys. Chem. 85, 235 (1981).Google Scholar
4 Fernandez de la Mora, J., Halpern, B.L, and Wilson, J.A., J. Fluid Mech. 149, 217 (1984).Google Scholar
5 Fernandez, J. de la Mora, J. Chem. Phys. 82, 3453 (1985).Google Scholar
6 McMillen, D. F. and Golden, D. M., Ann. Rev. Phys. Chem., 33, (1982).Google Scholar
7 Aldrich Chemical Co., Milwaukee, Wisconsin.Google Scholar
8 General Valve Corporation, Fairfield, New Jersey.Google Scholar
9 Lide, D. R., ed. CRC Handbook of Chemistry and Physics. 73th ed. (CRC Press, Boca Raton, Florida, 1980), p3–320.Google Scholar
10 Beilstein's Handbuch der Organischen Chemie EIII/IV (Beilstein institute, Frankfurt-am-Main, Germany, 1959), BI, 85.Google Scholar
11 Bernstein, R. B., Chemical Dynamics via Molecular Beam and Laser Techniques (Oxford Univ. Press, New York, 1982), Sec. 3.3.Google Scholar
12 Curtiss, T., PhD thesis, University of California Los angeles 1990.Google Scholar
13 Beam Dynamics inc., Minneapolis, Minnesot A.Google Scholar
14 Granville-Phillips, Boulder, Colorado.Google Scholar