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Low Temperature Film Growth by Supersonic Jets of CBr4

Published online by Cambridge University Press:  21 February 2011

Douglas A. A. Ohlberg ,
Garry Rose ,
James Ren  and
R. Stanley Williams
Douglas A. A. Ohlberg
Affiliation:
Department of Chemistry and Biochemistry, University of California Los angeles, Los angeles, CA 90024-1569
Garry Rose
Affiliation:
Department of Chemistry and Biochemistry, University of California Los angeles, Los angeles, CA 90024-1569
James Ren
Affiliation:
Department of Chemistry and Biochemistry, University of California Los angeles, Los angeles, CA 90024-1569
R. Stanley Williams
Affiliation:
Department of Chemistry and Biochemistry, University of California Los angeles, Los angeles, CA 90024-1569
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Abstract

Pulsed, supersonic jets of CBr4 seeded in a hydrogen bath gas have been used to deposit films on silicon at low temperatures (c A. 100° C) in a high vacuum chamber. IN situ analysis of the films using x-ray photoelectron spectroscopy (XPS) and depth profiling indicate a surface composition of 34% Br and 66 % C and a bulk composition of 88% C and 12% Br. the deposition efficiency of CBr4 was found to drop dramatically when seeded in bath gases of deuterium, helium, and argon, suggesting that the film growth is an activated process, requiring precursor energies of at least 3.6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 233
Copyright
Copyright © Materials Research Society 1995

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