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Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure

Published online by Cambridge University Press:  01 February 2011

Mitsutaka Matsumoto ,
Yohei Inayoshi ,
Maki Suemitsu ,
Setsuo Nakajima ,
Tsuyoshi Uehara  and
Yasutake Toyoshima
Mitsutaka Matsumoto
Affiliation:
[email protected], Tohoku University, engineering, Aramaki aza-Aoba, Aoba-ku, Sendai 980-8578, Japan, Sendai, N/A, Japan
Yohei Inayoshi
Affiliation:
[email protected], Tohoku University, Research Institute of Electrical Communication, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
Maki Suemitsu
Affiliation:
[email protected], Tohoku University, Research Institute of Electrical Communication, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
Setsuo Nakajima
Affiliation:
[email protected], Sekisui Chemicals Co. Ltd, 2-3-17 Toranomon, Minato-ku,, Tokyo, 105-8450, Japan
Tsuyoshi Uehara
Affiliation:
[email protected], Sekisui Chemicals Co. Ltd, 2-3-17 Toranomon, Minato-ku,, Tokyo, 105-8450, Japan
Yasutake Toyoshima
Affiliation:
[email protected], Energy Technology Research Institute, AIST, 1-1-1 Umezono, Tsukuba,, Tukuba, 305-8568, Japan
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Abstract

Low temperature (150 °C) deposition of doped and undoped polycrystalline Si (poly-Si) as well as SiNX films on polyethylene terephthalate (PET) films has been achieved with practical deposition rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2 for poly-Si while N2 has been additionally used for SiNx. No inert gases such as He was used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. With this technique, deposition of poly-Si thin film with virtually no incubation layer is possible, which in the case of P-doped poly-Si shows a Hall mobility (μH) of 1.5 cm2/V·s.

Keywords

plasma-enhanced CVD (PECVD) (deposition)Sithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A05-05
Copyright
Copyright © Materials Research Society 2008

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References

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