Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-24T19:42:32.595Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature CVD of Ru from C6H8Ru(CO)3

Published online by Cambridge University Press:  01 February 2011

Teresa S Lazarz ,
Yu Yang ,
Navneet Kumar ,
Do Young Kim ,
Wontae Noh ,
Gregory S Girolami  and
John R Abelson
Teresa S Lazarz
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana IL 61801, United States
Yu Yang
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
Navneet Kumar
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
Do Young Kim
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
Wontae Noh
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
Gregory S Girolami
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
John R Abelson
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
Get access

Abstract

Thin ruthenium films were deposited using chemical vapor deposition from the single-source precursor tricarbonyl(1,3-cyclohexadiene)Ru(0) onto silicon, silicon dioxide and c-plane sapphire substrates in the absence of a carrier gas by thermolysis. Growth rate, resistivity, purity, crystallinity and microstructure were determined. Tricarbonyl(1,3-cyclohexadiene)Ru(0) gave metallic ruthenium films with near bulk resistivities (11-21μΩ-cm), high growth rates (up to 20 nm/min), and nearly featureless microstructures. Nucleation was rapid on all substrates tested. These results suggest that tricarbonyl(1,3-cyclohexadiene)Ru(0) is an excellent, practical precursor to use for practical applications that require depositing thin ruthenium films.

Keywords

Ruchemical vapor deposition (CVD) (deposition)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B09-06
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Yamamichi, S., Lesaicherre, P. Y., Yamaguchi, H., Takemura, K., Sone, S., Yabuta, H., Sato, K., Tamura, T., Nakajima, K., Ohnishi, S., Tokashiki, K., Hayashi, Y., Kato, Y., Miyasaka, Y., Yoshida, M., and Ono, H., IEEE Trans. Electron Devices 44 (7), 1076 (1997); T. Iizuka, K. Arita, I. Yamamoto, and S. Yamamichi, NEC Res. Dev. 42 (1), 64 (2001).Google Scholar
2 Bandaru, J., Sands, T., and Tsakalakos, L., J. Appl. Phys. 84 (2), 1121 (1998); H. Maiwa, N. Ichinose, and K. Okazaki, Jpn. J. Appl. Phys. 33 (9B), 5223 (1994).Google Scholar
3 Misra, V., Lucovsky, G., and Parsons, G., Mater. Res. Bull. 27 (3), 212 (2002).Google Scholar
4 Arunagiri, T.N., Zhang, Y, and Chyan, O, Appl. Phys. Lett. 86 (2005); Ishita Goswami and Ravi Laxman, presented at the Semiconductor International, San Jose, 2004 (unpublished); Oliver Chyan, Tiruchirapalli N. Arunagiri, and Thomas Ponnuswamy, J. Electrochem. Soc. 150 (5), C347 (2003); R. Chan, T.N. Arunagiri, Y Zhang, O Chyan, R. M. Wallace, M. J. Kim, and T. Q. Hurd, Electrochem. Solid-State Lett. 7 (8), G154 (2004).Google Scholar
5 Choi, Jongwan, Choi, Youngmin, Hong, Jongin, Tian, Huyong, Roh, Jae-Sung, Kim, Younsoo, Chung, Taek-Mo, Oh, Young Woo, Kim, Yunsoo, Kim, Chang Gyun, and No, Kwangsoo, Jpn. J. Appl. Phys. 41 (11B), 6852 (2002).Google Scholar
6 Schneider, Andreas, Popovska, Nadja, Holzmann, Frank, Gerhard, Helmut, Topf, Christian, and Zenneck, Ulrich, Chemical Vapor Deposition 11 (2), 99 (2005).Google Scholar
7 Kang, S. Y., Lim, H. J., Hwang, C. S., and Kim, H. J., J. Electrochem. Soc. 149 (6), C317 (2002).Google Scholar
8 Kang, Sang Yeol, Hwang, Cheol Seong, and Kim, Hyeong Joon, J. Electrochem. Soc. 152 (1), C15 (2005).Google Scholar
9 Uhlenbrock, Stefan and Vaartstra, Brian A., United States of America Patent No. 6114557 (August 11, 1999 2000); Lienhard, Michael Alexander and Hoover, Cynthia A., United States of America Patent No. 6420583 (September 27, 2001 2002).Google Scholar
10 Jayaraman, Sreenivas, Yang, Yu, Kim, Do Young, Girolami, Gregory S., and Abelson, John R, J. Vac. Sci. Technol. A 26 (6), 1619 (2005).Google Scholar