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Low Temperature Crystallization of SrBi2Ta2O9 Film by Excimer Laser Irradiation

Published online by Cambridge University Press:  10 February 2011

K.S. Seol ,
H. Hiramatsu ,
Y. Ohki ,
D.-S. Shin ,
I.-H. Choi  and
Y-T. Kim
K.S. Seol
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama 51-0198, Japan, [email protected] Department of MS&E, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul, 16-701, Korea
H. Hiramatsu
Affiliation:
Department of EE&CE, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
Y. Ohki
Affiliation:
Department of EE&CE, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
D.-S. Shin
Affiliation:
Department of MS&E, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul, 16-701, Korea
I.-H. Choi
Affiliation:
Department of MS&E, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul, 16-701, Korea
Y-T. Kim
Affiliation:
KIST, P.O. Box 11, Cheongryang, Seoul, 10-650, Korea
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Abstract

Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 293
Copyright
Copyright © Materials Research Society 1999

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References

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