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Low Pressure Mocvd Growth and Characterization of GaAs and InP on Silicon Substrates

Published online by Cambridge University Press:  28 February 2011

M. Razeghi ,
M. Defour ,
F. Omnes ,
J. Nagle ,
P. Maurel ,
O. Acher ,
A. Huber  and
D. Mijuin
M. Razeghi
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91401 - Orsay Cedex, France.
M. Defour
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91401 - Orsay Cedex, France.
F. Omnes
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91401 - Orsay Cedex, France.
J. Nagle
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91401 - Orsay Cedex, France.
P. Maurel
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91401 - Orsay Cedex, France.
O. Acher
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91401 - Orsay Cedex, France.
A. Huber
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91401 - Orsay Cedex, France.
D. Mijuin
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91401 - Orsay Cedex, France.
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Abstract

High quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550ºC andthe growth rate 100 A/min.

Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GalnAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm-3 have been measured by electrochemical profiling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 297
Copyright
Copyright © Materials Research Society 1988

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References

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