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A Low Noise Silicon Detector Preamplifier System for Room Temperature X-Ray Spectroscopy

Published online by Cambridge University Press:  21 February 2011

G. Bertuccio  and
A. Pullia
G. Bertuccio
Affiliation:
Dipartimento di Elettronica e Informazione, Politecnico di Milano, P.zza L. Da Vinci 32, 20133 Milano, Italy
A. Pullia
Affiliation:
Dipartimento di Elettronica e Informazione, Politecnico di Milano, P.zza L. Da Vinci 32, 20133 Milano, Italy
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Abstract

The design and performances of a system for high resolution X-ray spectroscopy are presented. The detector is a low capacitance diode built on high resistivity silicon. The signal preamplification is made by means of an ultra-low noise charge amplifier of new conception. Presently the system exhibits an equivalent noise charge of 61 r.m.s. electrons at 297 K and 32 r.m.s. electrons at 223 K. It is shown how an improvement down to 30 r.m.s. electrons at room temperature is expected employing an integrated transistor on the detector chip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 597
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Bertuccio, G., Castoldi, A., Longoni, A., Sampietro, M. and Gauthier, C., Nucl. Instr. and Meth. A312 (1992) 613.Google Scholar
2. Bräuninger, H., Danner, R., Hauff, D. Lechner, P., Lutz, G., Meidinger, N., Pinotti, E., Reppin, C., Strtider, L., Trümper, J., Kendzioffa, E., Krämer, J., Mohan, M., Staubert, R., Findeis, N., Holl, P., Kemmer, J. and Zanthier, C. von, Nucl. Instr. and Meth. A326 (1993) 129.CrossRefGoogle Scholar
3. Gatti, E. and Manfredi, P.F., Riv. Nuovo Cimento 9 (1) (1986).Google Scholar
4. Radeka, V., Ann. Rev. Nucl. Part. Sci., 38 (1988) 217.Google Scholar
5. Bertuccio, G. and Pullia, A., A methodffor the determimnion of the noise parameters in preamplif5ng systems for semiconductor radiation detectors, to be published on Rev. Sci. Instr.Google Scholar
6. Gatti, E., Manfdi, P.F., Sampietro, M. and Speziali, V., Nucl. Instr. and Meth. A297 (1990) 467.Google Scholar
7. Lansing, D.A. et al. , IEEE Trans. Nuci. Sci. NS–18 (1971) 115.Google Scholar
8. Bertuccio, G., Rehak, P. and XI, D., Nucl. Instr. and Meth. A326 (1993) 71.CrossRefGoogle Scholar
9. Rehak, P., Rescia, S., Radeka, V., Gatti, E., Longoni, A., Sampietro, M., Bertuccio, G., Holl, P., Strüder, L., Kemmer, J., Prechtel, U. and Ziemann, T., Nucl. Instr. and Meth., A283 (1990) 168.Google Scholar
10. Mod.PH5786, Philips, Nededands.Google Scholar
11. n-channel JFET NJ26 produced by InterFET.Google Scholar
12. Amplifier 7614, Silena SpA Cemnusco S/N Milano (Italy).Google Scholar
13. Varro MCA, Silena SpA Cermisco S/N Milano (Italy).Google Scholar
14. Minity 55, acs SpA, Italy.Google Scholar
15. Pinotti, E., Bräuninger, H., Findeis, N., Gorke, H., D. Hauzt Holl, P., Kenimer, J., Lechner, P., Lutz, G., Kink, W., Meidinger, N., Metzner, G., Predehl, P., Reppin, C., Strüder, L., Trümper, J., Zanthier, C. V., Kendziorra, E., Staubert, R., Radeka, V., Rehak, P., Bertuccio, G., Gatti, E., Longoni, A., Pullia, A. and Sampietro, M., Nuci. Instr. and Meth. A326 (1993) 85.CrossRefGoogle Scholar