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Low K Sog Etchback and Teos Oxide Capping
Published online by Cambridge University Press: 15 February 2011
Abstract
SOG etchback was studied using Applied Materials' 200mm MxP+ etch chamber on Allied Signal's SOG (spin-on-glass) T11 and low κ SOP (spin-on-polymer) 418 together with liner films of PE-oxide and oxynitride for IMD (inter-metal dielectric) planarization. Excellent chamber performance and wide process window were demonstrated. Etch selectivities between various SOG and liner films are tunable in a wide range allowing optimization of IMD planarization.
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- Copyright © Materials Research Society 1997