Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T02:08:10.337Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Energy Electron Microscopy for Semiconductor Applications

Published online by Cambridge University Press:  01 February 2011

Marian Mankos ,
Vassil Spasov ,
Liqun Han ,
Shinichi Kojima ,
Ximan Jiang ,
Salam Harb ,
Luca Grella  and
Cory Czarnik
Marian Mankos
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Vassil Spasov
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Liqun Han
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Shinichi Kojima
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Ximan Jiang
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Salam Harb
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Luca Grella
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Cory Czarnik
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Get access

Abstract

A novel low energy electron microscope (LEEM) aimed at improving the throughput and extending the applications for semiconductor devices has been developed. A dual beam approach, where two beams with different landing energies illuminate the field of view, is used to mitigate the charging effects when the LEEM is used to image semiconductor substrates with insulating or composite (insulator, semiconductor, metal) surfaces. We have experimentally demonstrated this phenomenon by imaging a variety of semiconductor device wafers without deleterious charging effects. Results from several important semiconductor device layers will be illustrated in detail.

Keywords

semiconductingelectron microprobemorphology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1088: Symposium W – Advances and Applications of Surface Electron Microscopy , 2008 , 1088-W03-01
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Telieps, W. and Bauer, E., Ultramicroscopy, 17, p. 57 (1985).Google Scholar
2. Tromp, R.M. and Reuter, M.C., Ultramicroscopy, 50, p. 171 (1993).Google Scholar
3. Jansen, G.H., J. Appl. Phys. 84, p. 4549 (1998).Google Scholar
4. Mkrtchyan, M.M., Liddle, J.A., Berger, S.D. and Harriott, L.R., J. Appl. Phys. 78, p. 6888 (1995).Google Scholar
5. Mankos, M. and Adler, D., Ultramicroscopy, 93, p. 347 (2002).Google Scholar
6. Kolarik, V., Veneklasen, L.H. and Mankos, M., Optik, 87, p. 1 (1991).Google Scholar
7. Degenhardt, R., Ph.D.Dissertation, Technische Hochschule Darmstadt (1992).Google Scholar
8. Veneklasen, L.H. and Adler, D.L.; U.S. Patent # 6,586,733, July 1, 2003.Google Scholar
9. Adler, D.L. and Marcus, M.; U.S. Patent # 6,979,819, December 27, 2005.Google Scholar
10. Mankos, M., Adler, D., Veneklasen, L. and Munro, E., Surface Science, 601, p. 4733 (2007).Google Scholar
11. Mankos, M. and Munro, E., U.S. Patent # 7,217,924, May 15, 2007.Google Scholar
12. Step and Flash® imprint lithography (S-FIL®), Molecular Imprints, Inc. Google Scholar