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Localized Excimer Laser Energy Modulation in the Crystallization Of Poly-Si Film On Stepped Substrate

Published online by Cambridge University Press:  10 February 2011

Kee-Chan Park ,
Sang-Hoon Jung ,
Woo-Jin Nam  and
Min-Koo Han
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul Nat‘l Univ., Seoul, 151-742, KOREA. Tel. +82-2-880-7992, Fax. +82-2-883-0827, E-mail:[email protected]
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul Nat‘l Univ., Seoul, 151-742, KOREA. Tel. +82-2-880-7992, Fax. +82-2-883-0827, E-mail:[email protected]
Woo-Jin Nam
Affiliation:
School of Electrical Engineering, Seoul Nat‘l Univ., Seoul, 151-742, KOREA. Tel. +82-2-880-7992, Fax. +82-2-883-0827, E-mail:[email protected]
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul Nat‘l Univ., Seoul, 151-742, KOREA. Tel. +82-2-880-7992, Fax. +82-2-883-0827, E-mail:[email protected]
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Abstract

Anew excimer laser recrystallization method of a-Si film to increase the grain size of poly-Si film has been proposed. Excimer laser energy was locally modulated by being irradiated on stepped substrate with 500 nm deep trench on which a-Si film was deposited. Fairly large poly-Si grains (over 1 µm) were obtained due to lateral thermal gradient which resulted from the laser energy difference on the vertical wall and on the horizontal bottom plane of the trench without altering laser energy density elaborately.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 617: Symposium J – Laser-Solid Interactionsfor Materials Processing , 2000 , J1.5
Copyright
Copyright © Materials Research Society 2000

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References

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