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Liqiuid Crystal Display Fabricated from Laser Recrystallized Silicon on Bulk Fused Silica

Published online by Cambridge University Press:  21 February 2011

W. G. Hawkins ,
D. J. Drake ,
N. B. Goodman  and
P. J. Hartman
W. G. Hawkins
Affiliation:
Xerox Corporation, Webster Research Center, Webster, NY 14580
D. J. Drake
Affiliation:
Xerox Corporation, Webster Research Center, Webster, NY 14580
N. B. Goodman
Affiliation:
Xerox Corporation, Webster Research Center, Webster, NY 14580
P. J. Hartman
Affiliation:
Xerox Corporation, Webster Research Center, Webster, NY 14580
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Abstract

This paper discusses four aspects of fabrication of an active address liquid crystal array from laser recrystallized polycrystalline silicon: recrystallization, processing, device performance and array fabrication. The recrystallization process produces material which is imperfect by silicon wafer standards, but which contains few incoherent defects. The material was used to fabricate discrete n-channel MOS devices which had consistent off currents of 10−11 amps (0.4pA/μm of channel width) and on currents of 10−4 amps. Device threshold is controlled to + 200 mV and channel mobility is 500 to 600 cm2 /V-sec. The crossovers between Al/1% Si source and degenerately doped polycrystalline silicon gate lines were fabricated by use of high temperature reflowed, phosphorus doped chemical vapor deposited SiO2. Completed arrays had very few defects (no crossover defects and 0.3% bad devices).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 231
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Lakatos, A. I., IEEE Trans. Electron Devices ED–30, 525 (1983).Google Scholar
2. Hawkins, W. G., Black, J. G. and Griffiths, C. H., Appl. Phys. Lett. 40, 90 (1982).Google Scholar
3. Black, J. G., Hawkins, W. G. and Griffiths, C. H., J. Appl. Phys. 54, 5764 (1983).10.1063/1.331801Google Scholar
4. Geis, M. W., Smith, H. I., Tsaur, B-Y., Fan, J. C. C., Silversmith, D. J., Mountain, R. W. and Chapman, R. L., Laser-Solid Interactions and Transient Thermal Processing of Materials, Edited by Narayan, J., Brown, W. L. and Lemons, R. A. (Elsevier, New York, 1983), p. 477.Google Scholar
5. Sze, S. M., Physics of Semiconductor Devices, (John Wiley and Sons, Inc., New York, 1981), pp. 29 378.Google Scholar
6. Kowshik, V. and Dumin, D. J., IEEE Trans. Electron Devices ED–28, 993 (1981).Google Scholar
7. Sasaki, N., IEEE Trans. Electron Devices ED–28, 48 (1981).10.1109/T-ED.1981.20281CrossRefGoogle Scholar
8. Possin, G. E., Parks, H. G., Chiang, S-W and Liu, Y. S., IEEE Trans. Electron Devices ED–31, 68 (1984).Google Scholar
9. Johnson, N. M., Biegelsen, D. K., Tuan, H. C., Moyer, M. D. and Fennell, L. E., IEEE'Electron Device Letters EDL–3, 369 (1983).Google Scholar